About this Research Topic
In the last 40 years, the field of silicon sensors has seen impressive development with several families of detectors being invented, studied, and deployed for the detection of charged particles and photons in a wide energy range. In fact, scientific, medical, and consumer solutions rely heavily on silicon sensors. Still, space for new devices and improved performance seems possible. For this, some sensor performance needs to be pushed further so as to cover a broader applicability of silicon sensors. Both small research institutions and large companies are very active in the production and research for a multitude of applications, both industrial and scientific. In this collection, a review of the different types of silicon sensors and foreseeable developments will be presented by researchers active in the forefront of the field.
The underlying goal of this Research Topic is to give an overview of the status of silicon sensors, together with a historical perspective, to pave the way for a path forward. In fact, after 40 years of research that showed impressive results, with many different kinds of silicon sensors developed to be used in - and tailored for - many applications, still there is space for new contributions to the field. For this, some sensor performance needs to be further pushed so as to cover a broader applicability of silicon sensors. Ideally, the reader should find in this collection a comprehensive, instructional review of silicon sensors, with particular emphasis of the physical principles governing their functioning.
Submitted papers should cover one kind of silicon sensor, including but not limited to: active edge, 3D, CCDs, LGADs/avalanche diodes, strip sensors, SiPMs, SDDs, DEPFETs, CMOS, and hybrid pixels. In addition, topics such as radiation damage, TCAD simulations, read-out electronics, and specific uses (such as spectroscopy or high-energy physics) are of interest. A historical perspective is welcome. Principles of operation, functioning, pictorial descriptions, characterization techniques, applicability (scientific or industrial/commercial use), and what is foreseen to be done in the future to push the performance should also be addressed.
The underlying goal of this Research Topic is to give an overview of the status of silicon sensors, together with a historical perspective, to pave the way for a path forward. In fact, after 40 years of research that showed impressive results, with many different kinds of silicon sensors developed to be used in - and tailored for - many applications, still there is space for new contributions to the field. For this, some sensor performance needs to be further pushed so as to cover a broader applicability of silicon sensors. Ideally, the reader should find in this collection a comprehensive, instructional review of silicon sensors, with particular emphasis of the physical principles governing their functioning.
Submitted papers should cover one kind of silicon sensor, including but not limited to: active edge, 3D, CCDs, LGADs/avalanche diodes, strip sensors, SiPMs, SDDs, DEPFETs, CMOS, and hybrid pixels. In addition, topics such as radiation damage, TCAD simulations, read-out electronics, and specific uses (such as spectroscopy or high-energy physics) are of interest. A historical perspective is welcome. Principles of operation, functioning, pictorial descriptions, characterization techniques, applicability (scientific or industrial/commercial use), and what is foreseen to be done in the future to push the performance should also be addressed.
Keywords: silicon sensors, solid state detectors, imaging, spectroscopy, tracking, read-out electronics.
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
