Ultrawide bandgap (UWBG) semiconductors, incorporating materials such as Ga2O3, diamond, and AlxGa1-xN/AlN, are emerging as prime candidates for solar-blind ultraviolet photodetection applications essential in fields from environmental monitoring to military technologies. The recent decades have witnessed significant advancements in synthesizing these high-quality materials, boosting the development of effective solar-blind photodetectors (SBPDs). Despite this progress, challenges remain, such as the intricate growth processes requiring high temperatures and leading to oxygen vacancies, which in turn cause persistent photoconductivity, diminishing device efficiency.
The central aim of this research topic is to delve into the pressing challenges confronting UWBG semiconductor-based SBPDs. Foremost, this includes investigating how various growth techniques and conditions influence semiconductor quality and performance. Additionally, it encompasses pioneering efforts to mitigate the impact of electrical activity due to oxygen vacancies, thereby enhancing overall device functionality. Further, this research strives to comprehensively assess and advance the performance of SBPDs using UWBG semiconductors through diverse device configurations, directing the trajectory of future research in this pivotal area.
To enhance our understanding and application of UWBG semiconductor-based SBPDs, this research topic will focus on several key areas:
- Synthesis and characterization of high-quality UWBG semiconductors.
- Development and evaluation of diverse device architectures for SBPDs.
- Detailed investigation into the influence of growth techniques and conditions on semiconductor quality and functionality.
- Innovative strategies to curtail the electrical activity of oxygen vacancies to boost device performance.
- Assessment of the current performance standards of SBPDs using UWBG semiconductors across various configurations.
- Exploration of UWBG semiconductor-based SBPDs' potential applications in assorted sectors.
With these concentrated research efforts, the topic seeks to inspire groundbreaking discoveries and technological advancements in UWBG semiconductor devices and their applications.
Keywords:
UWBG semiconductors, Semiconductor-Based Photodetectors, solar-blind ultraviolet photodetection
Important Note:
All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
Ultrawide bandgap (UWBG) semiconductors, incorporating materials such as Ga2O3, diamond, and AlxGa1-xN/AlN, are emerging as prime candidates for solar-blind ultraviolet photodetection applications essential in fields from environmental monitoring to military technologies. The recent decades have witnessed significant advancements in synthesizing these high-quality materials, boosting the development of effective solar-blind photodetectors (SBPDs). Despite this progress, challenges remain, such as the intricate growth processes requiring high temperatures and leading to oxygen vacancies, which in turn cause persistent photoconductivity, diminishing device efficiency.
The central aim of this research topic is to delve into the pressing challenges confronting UWBG semiconductor-based SBPDs. Foremost, this includes investigating how various growth techniques and conditions influence semiconductor quality and performance. Additionally, it encompasses pioneering efforts to mitigate the impact of electrical activity due to oxygen vacancies, thereby enhancing overall device functionality. Further, this research strives to comprehensively assess and advance the performance of SBPDs using UWBG semiconductors through diverse device configurations, directing the trajectory of future research in this pivotal area.
To enhance our understanding and application of UWBG semiconductor-based SBPDs, this research topic will focus on several key areas:
- Synthesis and characterization of high-quality UWBG semiconductors.
- Development and evaluation of diverse device architectures for SBPDs.
- Detailed investigation into the influence of growth techniques and conditions on semiconductor quality and functionality.
- Innovative strategies to curtail the electrical activity of oxygen vacancies to boost device performance.
- Assessment of the current performance standards of SBPDs using UWBG semiconductors across various configurations.
- Exploration of UWBG semiconductor-based SBPDs' potential applications in assorted sectors.
With these concentrated research efforts, the topic seeks to inspire groundbreaking discoveries and technological advancements in UWBG semiconductor devices and their applications.
Keywords:
UWBG semiconductors, Semiconductor-Based Photodetectors, solar-blind ultraviolet photodetection
Important Note:
All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.