Ultrawide bandgap (UWBG) semiconductors, such as Ga2O3, diamond, Al x Ga1-x N/AlN, have shown significant potential for solar-blind ultraviolet photodetection, with applications in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over the past few decades, significant progress has been made in synthesizing high-quality UWBG semiconductors, which has facilitated the development of various high-performance solar-blind photodetectors (SBPDs). However, the preparation of these semiconductors often requires complex growth techniques and high growth temperatures, which can hinder their application. Additionally, the growth process of these materials often introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hinders device performance.
The goal of this research topic is to explore and address the key challenges in the field of UWBG semiconductor-based SBPDs. This includes investigating the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors, as well as exploring innovative approaches to suppress the electrical activity of Vo and improve device performance. The research also aims to evaluate the current state of device performance for SBPDs employing these UWBG semiconductors across different device configurations, and to steer future research endeavors in this critical domain.
To gather further insights into the development and application of UWBG semiconductor-based SBPDs, we welcome articles addressing, but not limited to, the following themes:
- The synthesis and characterization of high-quality UWBG semiconductors.
- The development and evaluation of different device architectures for SBPDs.
- The investigation of the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors.
- The exploration of innovative approaches to suppress the electrical activity of Vo and improve device performance.
- The evaluation of the current state of device performance for SBPDs employing UWBG semiconductors across different device configurations.
- The exploration of potential applications of UWBG semiconductor-based SBPDs in various fields.
Keywords:
UWBG semiconductors, Semiconductor-Based Photodetectors, solar-blind ultraviolet photodetection
Important Note:
All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
Ultrawide bandgap (UWBG) semiconductors, such as Ga2O3, diamond, Al x Ga1-x N/AlN, have shown significant potential for solar-blind ultraviolet photodetection, with applications in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over the past few decades, significant progress has been made in synthesizing high-quality UWBG semiconductors, which has facilitated the development of various high-performance solar-blind photodetectors (SBPDs). However, the preparation of these semiconductors often requires complex growth techniques and high growth temperatures, which can hinder their application. Additionally, the growth process of these materials often introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hinders device performance.
The goal of this research topic is to explore and address the key challenges in the field of UWBG semiconductor-based SBPDs. This includes investigating the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors, as well as exploring innovative approaches to suppress the electrical activity of Vo and improve device performance. The research also aims to evaluate the current state of device performance for SBPDs employing these UWBG semiconductors across different device configurations, and to steer future research endeavors in this critical domain.
To gather further insights into the development and application of UWBG semiconductor-based SBPDs, we welcome articles addressing, but not limited to, the following themes:
- The synthesis and characterization of high-quality UWBG semiconductors.
- The development and evaluation of different device architectures for SBPDs.
- The investigation of the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors.
- The exploration of innovative approaches to suppress the electrical activity of Vo and improve device performance.
- The evaluation of the current state of device performance for SBPDs employing UWBG semiconductors across different device configurations.
- The exploration of potential applications of UWBG semiconductor-based SBPDs in various fields.
Keywords:
UWBG semiconductors, Semiconductor-Based Photodetectors, solar-blind ultraviolet photodetection
Important Note:
All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.