Two dimensional Materials for Nanoelectronics

Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride, MXenes etc, are revolutionizing the field of nanoelectronics. These materials exhibit exceptional electrical, mechanical, and thermal properties due to their atomic-scale thickness and unique electronic structures. For example, graphene, a single layer of carbon atoms, offers remarkable electrical conductivity and flexibility, making it a prime candidate for high-speed transistors and flexible electronics. TMDs, including molybdenum disulfide (MoS2), provide significant bandgap tunability, essential for but not limited to efficient field-effect transistors (FETs), photodetectors, spintronics and Valleytronics, amongst others. Hexagonal boron nitride serves as an excellent insulator and substrate, enhancing the performance of other 2D materials.

The integration of these materials into nanoelectronics devices promises substantial advancements in miniaturization, energy efficiency, and performance. Ongoing research focuses on optimizing synthesis methods, understanding interfacial properties, and developing scalable fabrication techniques to harness the full potential of 2D materials in next-generation nanoelectronics applications.

The goal of this Research Topic is to provide detailed and broad understanding and perspective of 2D materials before the research community for a wide range of applications. This includes but not limited to exploring the electronic properties of materials like graphene, TMDs, hexagonal boron nitride, and MXenes to enhance device functionality such as transistors, sensors, flexible electronics, spintronics, and valleytronics, amongst others.
Additionally, another aim of this Research Topic is to put forward cutting-edge research to understand and control interfacial properties and material interactions to improve device stability, efficiency, and scalability, ultimately paving the way for the next generation of energy-efficient, miniaturized electronic devices.

We welcome submissions of Original Research, Reviews, Mini Reviews, and Perspective articles on various themes, including but not limited to:

• Synthesis and Characterization of 2D Materials
• Electronic Properties of Graphene in Nanoelectronics
• Novel crystal/thin film growth methods for 2D materials
• Transition Metal Dichalcogenides (TMDs) for Advanced Transistors
• Hexagonal Boron Nitride as an Insulating Layer in Nanoelectronics
• Interfacial Engineering of 2D Materials for Enhanced Device Performance
• Flexible and Wearable Electronics Using 2D Materials
• Energy-efficient Nanoelectronics: Role of 2D Materials
• Scalable Fabrication Techniques for 2D Material-Based Devices
• Optoelectronic Applications of Two-Dimensional Materials
• Integration of 2D Materials with Traditional Semiconductor Technologies
• Thermal Management in 2D Material-Based Nanoelectronics
• 2D Material Heterostructures for Novel Device Architectures
• Chemical Vapor Deposition (CVD) Growth of High-Quality 2D Materials
• Nanoscale Characterization Tools for 2D Materials
• 2D Materials in Spintronics and Vallytronics
• Emerging Applications of 2D Materials in Nanoelectronics

Keywords: 2D materials, Nanotechnology, nanoelectronics, 2D-transistors, thin film growth

Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.