About this Research Topic
According to the most recent taxonomy of memory devices as provided by the International Roadmap for Devices and Systems, a number of memory technologies are currently classed as emerging or prototypical. The latter represent devices that are either imminently entering production in niche applications or have already done so recently. The former represents devices that are still not mature enough to enter production but are considered very promising. The scientific interest and effort in these memory technologies is very high and a considerable amount of published work in the literature is focused towards these technologies. Of particular interest, in this instance, are all those emerging memory technologies that rely on resistance switching, which have received a lot of attention in the last decade both because of their simple two-terminal structure and because of their potential benefits over existing technologies.
The goal of this article collection is to provide an opportunity to gather high-quality works on resistance-switching memory technologies that have actively used nanomaterials (such as nanoparticles, quantum dots, nanorods, nanotubes, nanosheets, etc) in the device structure. It should be emphasized that the purpose is to highlight how the use/addition of nanomaterials in the device can bring additional benefits/functionalities to the operation of resistance-switching memory devices and their applications.
We welcome the submission of Original Research, Review, Mini Review, and Perspective articles on resistance-switching memory technologies based on nanomaterials. The work may focus on theory/modelling or may be experimental in nature and topics include, but are not limited to:
• Oxide-based resistive memory (OXRAM)
• Conducting bridge memory (CBM)
• Macromolecular (POLYMER) memory
We should also clarify that we welcome submissions for devices in both crossbar or co-planar configurations, using organic or inorganic or hybrid materials.
The goal of this article collection is to provide an opportunity to gather high-quality works on resistance-switching memory technologies that have actively used nanomaterials (such as nanoparticles, quantum dots, nanorods, nanotubes, nanosheets, etc) in the device structure. It should be emphasized that the purpose is to highlight how the use/addition of nanomaterials in the device can bring additional benefits/functionalities to the operation of resistance-switching memory devices and their applications.
We welcome the submission of Original Research, Review, Mini Review, and Perspective articles on resistance-switching memory technologies based on nanomaterials. The work may focus on theory/modelling or may be experimental in nature and topics include, but are not limited to:
• Oxide-based resistive memory (OXRAM)
• Conducting bridge memory (CBM)
• Macromolecular (POLYMER) memory
We should also clarify that we welcome submissions for devices in both crossbar or co-planar configurations, using organic or inorganic or hybrid materials.
Keywords: Resistive memory, conducting bridge, polymer, memristor, nanomaterials, OXRAM, CBM
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
