ORIGINAL RESEARCH
Accepted on 04 Mar 2025
Piezoelectric and Ferroelectric Measurements on Casted Target-Deposited Al 0.45 Sc 0.45 B 0.1 N Thin Films
doi 10.3389/fmats.2025.1567614
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- Frontiers in Materials
- Semiconducting Materials and Devices
- Research Topics
- Advancing Transition Metal Nitride Semiconductors: Overcoming Integration Challenges and Exploring Applications
Advancing Transition Metal Nitride Semiconductors: Overcoming Integration Challenges and Exploring Applications
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Articles
REVIEW
Published on 04 Feb 2025
A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications
doi 10.3389/fmats.2025.1526968
- 714 views
ORIGINAL RESEARCH
Published on 29 Jan 2025
Epitaxial growth of transition metal nitrides by reactive sputtering
doi 10.3389/fmats.2025.1507123
- 540 views
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Frontiers in Materials
Semiconducting Materials and Devices
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