Near-infrared radiation is crucial in telecommunications, biological imaging, and threat detection. Epitaxial III–V semiconductors (e.g., InxGa1-xAs) are ubiquitous near-IR emitters and detectors owing to their bandgap tunability, short radiative times, and ease of coupling to resonant cavities. Single InxGa1-xAs quantum dots (QDs) have shown long coherence times and photon indistinguishability. Epitaxial growth, however, is area-scalable, requires sophisticated apparatus, and involves toxic volatile precursors. Moreover, growing two QDs of identical photon energy within the radiative linewidth remains unachievable but highly desirable in quantum communication. Colloidal synthesis, on the other hand, offers a great degree of bandgap tunability, provides substantial control over the QDs surface, and affords gram quantities of the material per synthesis.
Despite the tremendous improvements in recent years, colloidal near-IR emitters still lag the well established II - VI visible emitters, in part, because of surface trap states and antisite defects in colloidal III–V QDs. The research goal is to fabricate bright, fast, and durable near-IR emitters.
In this Research Topic, we are looking for recent advances in the synthesis of bright, fast, tunable, minimally toxic, and durable near-IR nanoparticle emitters, including but not limited to colloidal QDs and polymer dots. We are accepting manuscripts covering the synthesis, steady-state and time-resolved spectroscopy, quantum yield measurements, microscopy, and long-time stability of near-IR-emitting materials.
Keywords:
quantum dots, near-IR emission, narrow-gap emitters, narrow-gap polymers
Important Note:
All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
Near-infrared radiation is crucial in telecommunications, biological imaging, and threat detection. Epitaxial III–V semiconductors (e.g., InxGa1-xAs) are ubiquitous near-IR emitters and detectors owing to their bandgap tunability, short radiative times, and ease of coupling to resonant cavities. Single InxGa1-xAs quantum dots (QDs) have shown long coherence times and photon indistinguishability. Epitaxial growth, however, is area-scalable, requires sophisticated apparatus, and involves toxic volatile precursors. Moreover, growing two QDs of identical photon energy within the radiative linewidth remains unachievable but highly desirable in quantum communication. Colloidal synthesis, on the other hand, offers a great degree of bandgap tunability, provides substantial control over the QDs surface, and affords gram quantities of the material per synthesis.
Despite the tremendous improvements in recent years, colloidal near-IR emitters still lag the well established II - VI visible emitters, in part, because of surface trap states and antisite defects in colloidal III–V QDs. The research goal is to fabricate bright, fast, and durable near-IR emitters.
In this Research Topic, we are looking for recent advances in the synthesis of bright, fast, tunable, minimally toxic, and durable near-IR nanoparticle emitters, including but not limited to colloidal QDs and polymer dots. We are accepting manuscripts covering the synthesis, steady-state and time-resolved spectroscopy, quantum yield measurements, microscopy, and long-time stability of near-IR-emitting materials.
Keywords:
quantum dots, near-IR emission, narrow-gap emitters, narrow-gap polymers
Important Note:
All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.