About this Research Topic
High-Z and wide-bandgap compound semiconductor radiation detectors have been widely proposed for X-ray and gamma-ray spectroscopy and imaging, opening new perspectives in several application areas such as synchrotron science, nuclear physics, homeland security, medical imaging, astrophysics and food industry. These materials, opening to different combinations of atomic number and bandgap, represent an important class of X-ray and gamma-ray detectors able to perform high-resolution measurements near room-temperature conditions. CdTe, CdZnTe, CdZnTeSe, GaAs, HgI2 and TlBr have been developed, and continuous improvements in the advancement of the crystal growth and device fabrication technologies are desired.
Despite the potentialities of these materials and the great progresses obtained in the las two decades, in terms of detection efficiency and room temperature performance, there are still some noteworthy challenges in developing room temperature radiation detectors. Low dark current noise, high charge collection properties, uniformity and reproducibility, large detection area, stability and low spectroscopic and counting degradations at high fluxes are desired. Novel high-Z and wide-bandgap compound semiconductors, crystal growth processes, electrical contact deposition and detector electrode designs might be feasible ways to overcome these critical issues.
This Research Topic aims to receive submissions of both review and original research articles related to the state-of-the-art in high-Z and wide-bandgap compound semiconductor radiation detectors as well as prospects for future developments and applications.
We truly welcome any researchers to share their results on the themes including but not limited to the following subjects:
• Novel high-Z and wide-bandgap compound semiconductors.
• Novel crystal growth techniques.
• Electrical contact and interface improvements.
• X-ray detection theory and model of electrical and collection transport properties.
• Novel detection and pulse processing techniques.
• Novel applications.
Despite the potentialities of these materials and the great progresses obtained in the las two decades, in terms of detection efficiency and room temperature performance, there are still some noteworthy challenges in developing room temperature radiation detectors. Low dark current noise, high charge collection properties, uniformity and reproducibility, large detection area, stability and low spectroscopic and counting degradations at high fluxes are desired. Novel high-Z and wide-bandgap compound semiconductors, crystal growth processes, electrical contact deposition and detector electrode designs might be feasible ways to overcome these critical issues.
This Research Topic aims to receive submissions of both review and original research articles related to the state-of-the-art in high-Z and wide-bandgap compound semiconductor radiation detectors as well as prospects for future developments and applications.
We truly welcome any researchers to share their results on the themes including but not limited to the following subjects:
• Novel high-Z and wide-bandgap compound semiconductors.
• Novel crystal growth techniques.
• Electrical contact and interface improvements.
• X-ray detection theory and model of electrical and collection transport properties.
• Novel detection and pulse processing techniques.
• Novel applications.
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
