Original Research
Accepted on 08 Jan 2025
Epitaxial growth of transition metal nitrides by reactive sputtering
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1507123
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109 articles
Articles
Original Research
Published on 08 Jan 2025
Process-dependent ferroelectric and memristive properties in polycrystalline Ca:HfO2-based devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1501000
- 184 views
Original Research
Published on 07 Nov 2024
High-performance optoelectronic devices based on TeOx nanowires: synthesis, characterization and photodetection
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1497540
- 377 views
Original Research
Published on 11 Oct 2024
Submicron-scale Au-decorated TiO2 mesoporous spheres for enhanced photon harvesting in DSSCs through near-field enhancement, light scattering, and dye loading
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1457325
- 557 views
Original Research
Published on 14 Aug 2024
Ferroelastic twin walls for neuromorphic device applications
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1406853
- 815 views
Original Research
Published on 13 Jun 2024
Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1430884
- 981 views
Review
Published on 03 Jun 2024
MPX3 van der Waals magnets under pressure (M = Mn, Ni, V, Fe, Co, Cd; X = S, Se)
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1362744
- 2,641 views
- 1 citation
Original Research
Published on 03 Jun 2024
Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1343076
- 1,497 views
- 1 citation
Original Research
Published on 24 May 2024
Heterostructured Ti3C2Tx/carbon nanohorn-based gas sensor for NH3 detection at room temperature
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1383538
- 1,077 views
- 1 citation
Original Research
Published on 09 May 2024
Mixed volatility in a single device: memristive non-volatile and threshold switching in SmNiO3/BaTiO3 devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1356610
- 1,613 views
Editorial
Published on 27 Mar 2024
Editorial: Micro-nano optics and photocatalysis: materials, devices, and applications- volume II
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1387064
- 1,152 views
Original Research
Published on 25 Mar 2024
Electron conduction mechanism in indium oxide and its implications for amorphous transport
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1380180
- 2,028 views
Original Research
Published on 15 Feb 2024
Trap-assisted monolayer ReSe2/Si heterojunction with high photoconductive gain and self-driven broadband photodetector.
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1354522
- 2,227 views
- 1 citation
Original Research
Published on 23 Jan 2024
Modeling a domain wall network in BiFeO3 with stochastic geometry and entropy-based similarity measure
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1323153
- 1,549 views
- 2 citations
Original Research
Published on 11 Jan 2024
Effect of strain profiling on anisotropic opto-electronic properties of As2X3 (X =S, Te) monolayers from first principles
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2023.1325194
- 1,336 views
Original Research
Published on 06 Dec 2023
Towards sustainable, solution-processed organic field-effect transistors using cashew gum as the gate dielectric
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2023.1280543
- 2,597 views
- 1 citation