Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water
- 1Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
- 2National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China
A Corrigendum on
Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water
by Xu R, Zhou Z, Li J, Zhang X, Zhu Y, Xiao H, Xu L, Ding Y, Li A and Fang G (2022). Front. Chem. 10:1035902. doi: 10.3389/fchem.2022.1035902
In the original article, the Supplementary material contained “Data Sheet 1”, which was not intended for publication. The incorrect file has been unpublished, and the remaining file, previously “Data Sheet 2”, has been renamed as “Data Sheet 1”.
The authors apologize for this error and state that this does not change the scientific conclusions of the article in any way. The original article has been updated.
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Keywords: zirconium oxide, atomic layer deposition, reaction mechanism, tetrakis(dimethylamino)zirconium, density functional theory
Citation: Xu R, Zhou Z, Li J, Zhang X, Zhu Y, Xiao H, Xu L, Ding Y, Li A and Fang G (2022) Corrigendum: Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water. Front. Chem. 10:1118819. doi: 10.3389/fchem.2022.1118819
Received: 08 December 2022; Accepted: 14 December 2022;
Published: 20 December 2022.
Edited and reviewed by:
Sudip Pan, Jilin University, ChinaCopyright © 2022 Xu, Zhou, Li, Zhang, Zhu, Xiao, Xu, Ding, Li and Fang. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
*Correspondence: Hongping Xiao, aHBfeGlhb0B3enUuZWR1LmNu; Lina Xu, eHVsaW5hQHd6dS5lZHUuY24=; Guoyong Fang, ZmFuZ2d5QHd6dS5lZHUuY24=