Binary oxide systems showing ferroelectric properties are frontrunner materials with potential application as CMOS compatible ferroelectric memory, fast and low-power logic. In this space, HfO2 and ZrO2 are extensively investigated in capacitor- and transistor-based concepts, with important demonstrations already reported for 2D/3D non-volatile memory devices, neuromorphic computing, and steep-slope transistors, utilizing the negative-capacitance effects.
The origin of a polar non-centrosymmetric ferroelectric state in HfO2/ZrO2 has been explained by a multitude of physical mechanisms, including the occurrence of ferroelectric phase stabilization by surface and size effects, and doping- and strain-induced polymorphic phases. However, in thin films, the major role played by crystalline phases, grain size and distribution on the overall device performance, creates a large gap between the results obtained in integrated devices and the physical materials characterization. This Research Topic addresses the physical analysis of HfO2/ZrO2-based ferroelectrics and the polar nature of these materials down to a thickness of a few nanometers, highlighting the open challenges for the community and the fundamental science behind the formation of ferroelectricity.
We invite the submission of Original Research, Review, Mini Review, Perspective articles on themes including, but not limited to:
• HfO2/ZrO2-based emerging memories (FERAM, FEFETs, and novel concepts)
• Direct probing of morphotropic and field-induced phase transitions
• In-situ characterization schemes
• Interfacial effects
• Fundamental insights from theory and experiments
• Electric field cycling and failure analysis
• Probing piezo- and pyroelectric properties at the local scale
Binary oxide systems showing ferroelectric properties are frontrunner materials with potential application as CMOS compatible ferroelectric memory, fast and low-power logic. In this space, HfO2 and ZrO2 are extensively investigated in capacitor- and transistor-based concepts, with important demonstrations already reported for 2D/3D non-volatile memory devices, neuromorphic computing, and steep-slope transistors, utilizing the negative-capacitance effects.
The origin of a polar non-centrosymmetric ferroelectric state in HfO2/ZrO2 has been explained by a multitude of physical mechanisms, including the occurrence of ferroelectric phase stabilization by surface and size effects, and doping- and strain-induced polymorphic phases. However, in thin films, the major role played by crystalline phases, grain size and distribution on the overall device performance, creates a large gap between the results obtained in integrated devices and the physical materials characterization. This Research Topic addresses the physical analysis of HfO2/ZrO2-based ferroelectrics and the polar nature of these materials down to a thickness of a few nanometers, highlighting the open challenges for the community and the fundamental science behind the formation of ferroelectricity.
We invite the submission of Original Research, Review, Mini Review, Perspective articles on themes including, but not limited to:
• HfO2/ZrO2-based emerging memories (FERAM, FEFETs, and novel concepts)
• Direct probing of morphotropic and field-induced phase transitions
• In-situ characterization schemes
• Interfacial effects
• Fundamental insights from theory and experiments
• Electric field cycling and failure analysis
• Probing piezo- and pyroelectric properties at the local scale
