Near-infrared (NIR) materials refer to substances that can interact with light in the spectral region from 750-2500 nm. Under the external stimulus such as photoexcitation, electric field, and chemical reaction, NIR materials interact with absorption and reflection, and emit NIR light, etc. resulting in their potential applications in heat absorbers, imaging, solar cells, communication, sensing and detection, information storage and advanced optoelectronics.
The principle of optoelectronics is that radiation causes a change in the conductivity of the material being irradiated. The NIR waveband has been widely used for ray measurement and detection, industrial automatic control, photometry, infrared thermal imaging, infrared remote sensing, and so on. Meanwhile, the development of advanced NIR optoelectronic devices working in optical communication waveband is of great significance since their wide applications in the fields of military, information communication and imaging. The research on NIR optoelectronics includes the selection of appropriate materials, design and simulation of the device structure, performance optimization, and so on. Besides, NIR optoelectronics have important applications in the field of biology and medicine, such as synapses, reinforcement learning and photothermal therapy. With the deepening research of NIR optoelectronics, the performances and application fields of the devices are continuously improved and expanded.
In view of the spectacular technological revolution in recent years, there have been a great number of advances in the domain knowledge and associated applications of the latest technologies. This Research Topic aims to provide a platform to display the research achievements of peer experts in the field of NIR optoelectronics, including the latest achievements and future challenges from material selection to structure design, fabrication method, performance analysis and applications. Original research and review articles are encouraged. Topics of interest in this collection include, but are not limited to:
• New advances in NIR materials;
• Material selection, structure design, and preparation method of NIR optoelectronics;
• Theoretical research and performance simulation analysis of NIR optoelectronics;
• Memory and biological synaptic applications based on NIR.
Near-infrared (NIR) materials refer to substances that can interact with light in the spectral region from 750-2500 nm. Under the external stimulus such as photoexcitation, electric field, and chemical reaction, NIR materials interact with absorption and reflection, and emit NIR light, etc. resulting in their potential applications in heat absorbers, imaging, solar cells, communication, sensing and detection, information storage and advanced optoelectronics.
The principle of optoelectronics is that radiation causes a change in the conductivity of the material being irradiated. The NIR waveband has been widely used for ray measurement and detection, industrial automatic control, photometry, infrared thermal imaging, infrared remote sensing, and so on. Meanwhile, the development of advanced NIR optoelectronic devices working in optical communication waveband is of great significance since their wide applications in the fields of military, information communication and imaging. The research on NIR optoelectronics includes the selection of appropriate materials, design and simulation of the device structure, performance optimization, and so on. Besides, NIR optoelectronics have important applications in the field of biology and medicine, such as synapses, reinforcement learning and photothermal therapy. With the deepening research of NIR optoelectronics, the performances and application fields of the devices are continuously improved and expanded.
In view of the spectacular technological revolution in recent years, there have been a great number of advances in the domain knowledge and associated applications of the latest technologies. This Research Topic aims to provide a platform to display the research achievements of peer experts in the field of NIR optoelectronics, including the latest achievements and future challenges from material selection to structure design, fabrication method, performance analysis and applications. Original research and review articles are encouraged. Topics of interest in this collection include, but are not limited to:
• New advances in NIR materials;
• Material selection, structure design, and preparation method of NIR optoelectronics;
• Theoretical research and performance simulation analysis of NIR optoelectronics;
• Memory and biological synaptic applications based on NIR.