As classical scaling of Moore's law stopped at around 90nm node in 2003 and equivalent scaling slowing down at 7nm node in 2022, silicon based CMOS integrated circuits face a serious challenge for further scaling. Thus, it's necessary even urgent to develop emerging chip materials, novel devices structure, new integration process, special system architecture for post Moore's era. As the performance improvements requirements of next generation ICs, topics from non-silicon semiconductors, beyond CMOS devices, high density integration process to unique system architecture for applications or other related topics is strongly welcomed. At the same time, the development of devices largely promoted bioelectronics such as information processing systems, sensors and actuators. Superior device performance provides more accurate detection and analysis of biomolecules and signals; Novel materials in devices provide better biocompatibility and flexibility.
The basic goal of this Research Topic includes: (1) assess the most promising materials or devices strucure for certain applications, such as carbon based materials, layered materials, organic semiconductors, pervoskite, vertical or lateral devices, superlattice devices,etc. (2) address the RC delay issues for beyond 5nm node by high conductive interconnect materials and ultra low k materials, as well as new interconnect design (3) evaluate the high density and high order devices and module integration process by 3D monolitholic integration or 3D packaging and its following heat dissipation issues, interfacial layer issues, etc (4) present novel materials and superior devices applied in the analysis, selection and identification of biomolecules, disease diagnosis, interface between organism and device etc.
The ultimate aim of this Research Topic is to provide a forum for researchers to present the state-of-the-art progress and to review the recent development, challenges and opportunities for post Moore's era. The topic has an emphasis on emerging semiconductors, next generation interconnect materials, novel device structure and new working principle devices, 3D integration process, as well as the recent progress in developing bioelectronics, sensoring, etc. Both Original Research and Review paper are welcomed.
Potential topics include, but are not limited to:
(1) emerging non-silicon semiconductors, such as carbon based materials, layered materials, organic semiconductors, pervoskite, etc
(2) novel devices structures and working principles, including but not limited to vertical heterostructures, lateral multijuncitons, superlattice devices, spintronics, etc
(3) new integration process for high density integrated system, such as devices 3D integration, array 3D integration, deck/module 3D integration, system 3D integration, etc
(4) progress in materials and devices applied bioelectronics, biochip, biosensors etc.
As classical scaling of Moore's law stopped at around 90nm node in 2003 and equivalent scaling slowing down at 7nm node in 2022, silicon based CMOS integrated circuits face a serious challenge for further scaling. Thus, it's necessary even urgent to develop emerging chip materials, novel devices structure, new integration process, special system architecture for post Moore's era. As the performance improvements requirements of next generation ICs, topics from non-silicon semiconductors, beyond CMOS devices, high density integration process to unique system architecture for applications or other related topics is strongly welcomed. At the same time, the development of devices largely promoted bioelectronics such as information processing systems, sensors and actuators. Superior device performance provides more accurate detection and analysis of biomolecules and signals; Novel materials in devices provide better biocompatibility and flexibility.
The basic goal of this Research Topic includes: (1) assess the most promising materials or devices strucure for certain applications, such as carbon based materials, layered materials, organic semiconductors, pervoskite, vertical or lateral devices, superlattice devices,etc. (2) address the RC delay issues for beyond 5nm node by high conductive interconnect materials and ultra low k materials, as well as new interconnect design (3) evaluate the high density and high order devices and module integration process by 3D monolitholic integration or 3D packaging and its following heat dissipation issues, interfacial layer issues, etc (4) present novel materials and superior devices applied in the analysis, selection and identification of biomolecules, disease diagnosis, interface between organism and device etc.
The ultimate aim of this Research Topic is to provide a forum for researchers to present the state-of-the-art progress and to review the recent development, challenges and opportunities for post Moore's era. The topic has an emphasis on emerging semiconductors, next generation interconnect materials, novel device structure and new working principle devices, 3D integration process, as well as the recent progress in developing bioelectronics, sensoring, etc. Both Original Research and Review paper are welcomed.
Potential topics include, but are not limited to:
(1) emerging non-silicon semiconductors, such as carbon based materials, layered materials, organic semiconductors, pervoskite, etc
(2) novel devices structures and working principles, including but not limited to vertical heterostructures, lateral multijuncitons, superlattice devices, spintronics, etc
(3) new integration process for high density integrated system, such as devices 3D integration, array 3D integration, deck/module 3D integration, system 3D integration, etc
(4) progress in materials and devices applied bioelectronics, biochip, biosensors etc.
