In the past decade, the exploration of novel semiconductors has become one of the most primary missions in the field to extend the electrical and electronic device application. Activated by the success of the wide-bandgap semiconductors in industry, e.g., GaN in LED and SiC in new energy vehicles, the ultra-wide bandgap semiconductors have attracted a huge amount of attention due to their extremely short emission wavelength and high breakdown voltage. Therefore, they are promising for revolutionizing various types of electronic and optical devices. It is of significant meaning and perspective to deepen the understand and application of such a series of materials in both aspects of fundamental research and industry application.
Such work aims at setting up a special topic that involves the preparation and physics research of various ultra-wide bandgap semiconductors, including diamond, boron nitride, allium nitride, and gallium oxide. The specific topic will become an ideal platform to hold the most recent and significant research. Therefore, it will improve the ideal exchange of experts in the world and will contribute to the development in the field. In addition to the fundamental research, understanding physics in novel semiconductors will also denote speeding up their application in industry. On the other hand, the set-up of the topic will help a lot to strengthen the influence of publication, particularly in the semiconductor field, by highlighting such an attractive issue.
This Research Topic aims to announce the preparation and physics of ultra-wide bandgap semiconductors, e.g., diamond, gallium oxide, boron nitride, and aluminum nitride. For the semiconductor preparation, both bulk and film are included. Therefore, any research responding to material preparation, e.g., strain, defects, composition, etc., is preferred. In addition, various novel phenomena from the ultra-wide bandgap semiconductors also contribute considerably to condensed matter physics, e.g., superconductor and single-photon emission, as well as other optical and electrical transport properties. Therefore, any related investigations on the ultra-wide bandgap semiconductors are welcome for the topic as below:
• Preparation of ultra-wide bandgap semiconductors;
• Theory of ultra-wide bandgap semiconductors;
• Electrical properties of ultra-wide bandgap semiconductors;
• Optical properties of ultra-wide bandgap semiconductors;
• Thermal properties of ultra-wide bandgap semiconductors;
• Magnetic properties of ultra-wide bandgap semiconductors.
In the past decade, the exploration of novel semiconductors has become one of the most primary missions in the field to extend the electrical and electronic device application. Activated by the success of the wide-bandgap semiconductors in industry, e.g., GaN in LED and SiC in new energy vehicles, the ultra-wide bandgap semiconductors have attracted a huge amount of attention due to their extremely short emission wavelength and high breakdown voltage. Therefore, they are promising for revolutionizing various types of electronic and optical devices. It is of significant meaning and perspective to deepen the understand and application of such a series of materials in both aspects of fundamental research and industry application.
Such work aims at setting up a special topic that involves the preparation and physics research of various ultra-wide bandgap semiconductors, including diamond, boron nitride, allium nitride, and gallium oxide. The specific topic will become an ideal platform to hold the most recent and significant research. Therefore, it will improve the ideal exchange of experts in the world and will contribute to the development in the field. In addition to the fundamental research, understanding physics in novel semiconductors will also denote speeding up their application in industry. On the other hand, the set-up of the topic will help a lot to strengthen the influence of publication, particularly in the semiconductor field, by highlighting such an attractive issue.
This Research Topic aims to announce the preparation and physics of ultra-wide bandgap semiconductors, e.g., diamond, gallium oxide, boron nitride, and aluminum nitride. For the semiconductor preparation, both bulk and film are included. Therefore, any research responding to material preparation, e.g., strain, defects, composition, etc., is preferred. In addition, various novel phenomena from the ultra-wide bandgap semiconductors also contribute considerably to condensed matter physics, e.g., superconductor and single-photon emission, as well as other optical and electrical transport properties. Therefore, any related investigations on the ultra-wide bandgap semiconductors are welcome for the topic as below:
• Preparation of ultra-wide bandgap semiconductors;
• Theory of ultra-wide bandgap semiconductors;
• Electrical properties of ultra-wide bandgap semiconductors;
• Optical properties of ultra-wide bandgap semiconductors;
• Thermal properties of ultra-wide bandgap semiconductors;
• Magnetic properties of ultra-wide bandgap semiconductors.