We are pleased to introduce the collection, 2021 Retrospective: Semiconducting Materials and Devices. This collection showcases well-received spontaneous articles from the past couple of years, which have been specially handpicked by our Chief Editor, Prof. Peide Ye. The work presented here highlights the broad diversity of research performed across the section, and aims to put a spotlight on the main areas of interest. All research presented here displays strong advances in theory, experiment and methodology with applications to compelling problems. This collection aims to further support Frontiers’ strong community by recognizing highly deserving authors.

Purdue University

Acknowledging excellence in semiconductor discoveries across various fields.

. This research topic focuses on the potential of novel materials and structures to drive the development of advanced technologies. Highlights include: <ul> <li>Ternary logic has been shown to carry more information than binary logic, and a novel input waveform scheme has been proposed to address the hysteresis problem.</li> <li>Gallium sulfide (GaS) has been studied for its nonlinear absorption characteristics and large nonlinear optical response.</li> <li>A Ti/NbOx/Ti/Pt device has shown excellent performance and stability when used as a selector in a 1S1R structure.</li> <li>Monoclinic Ga2O3 (β-Ga2O3) films have been used to fabricate a solar-blind photodetector with a back-gate MOS structure, exhibiting excellent stability, fast response and recovery times, and a responsivity of 417.5 A/W.</li> </ul>

Frontiers in Materials

Semiconducting Materials and Devices

Frontiers in Electronic Materials

2021 Retrospective: Semiconducting Materials and Devices

Ternary logic has been proven to carry an information ratio 1.58 times that of binary logic and is capable to reduce circuit interconnections and complexity of operations. However, the excessive transistor count of ternary logic gates has impeded their industry applications for decades. With the modulation of the ferroelectric negative capacitance (NC) properties on the channel potential, MOSFETs show many novel features including steep subthreshold swing and non-saturation output characteristics, based on which an ultra-compact ternary inverter can be achieved. Compared with traditional bulk materials, layered 2D materials and 2D ferroelectrics provide a clean interface and better electrostatic control and reliability. Even though ultra-low SS (∼10 mV/dec) has been experimentally demonstrated in ferroelectric-negative capacitance-incorporated 2D semiconductor (NC2D) FETs, the available models are still rare for large-scale circuit simulations. In this study, the superb electrical properties of pure 2D material stack-based NC2D FETs (layered CuInP2S6 adopted as the 2D ferroelectric layer) are investigated through device modeling based on the Landau–Khalatnikov (LK) equations in HSPICE. We managed to realize an ultra-compact ternary inverter with one NC2D-PMOS (WSe2) and one NC2D-NMOS (MoS2) in HSPICE simulations, whose transistor count is significantly reduced compared with other counterparts. We also proposed a novel input waveform scheme to solve the hysteresis problem caused by ferroelectric modulation to avoid logic confusion. Additionally, the power consumption and propagation delay of the NC2D-based ternary inverter are also investigated. This work may provide some insights into the design and applications of ferroelectric-incorporated 2D semiconductor devices.

Ternary logic has been proven to carry an information ratio 1.58 times that of binary logic and is capable to reduce circuit interconnections and complexity of operations. However, the excessive transistor count of ternary logic gates has impeded their industry applications for decades. With the modulation of the ferroelectric negative capacitance (NC) properties on the channel potential, MOSFETs show many novel features including steep subthreshold swing and non-saturation output characteristics, based on which an ultra-compact ternary inverter can be achieved. Compared with traditional bulk materials, layered 2D materials and 2D ferroelectrics provide a clean interface and better electrostatic control and reliability. Even though ultra-low SS (∼10&nbsp;mV/dec) has been experimentally demonstrated in ferroelectric-negative capacitance-incorporated 2D semiconductor (NC2D) FETs, the available models are still rare for large-scale circuit simulations. In this study, the superb electrical properties of pure 2D material stack-based NC2D FETs (layered CuInP2S6 adopted as the 2D ferroelectric layer) are investigated through device modeling based on the Landau–Khalatnikov (LK) equations in HSPICE. We managed to realize an ultra-compact ternary inverter with one NC2D-PMOS (WSe2) and one NC2D-NMOS (MoS2) in HSPICE simulations, whose transistor count is significantly reduced compared with other counterparts. We also proposed a novel input waveform scheme to solve the hysteresis problem caused by ferroelectric modulation to avoid logic confusion. Additionally, the power consumption and propagation delay of the NC2D-based ternary inverter are also investigated. This work may provide some insights into the design and applications of ferroelectric-incorporated 2D semiconductor devices.

Ternary Logics Based on 2D Ferroelectric-Incorporated 2D Semiconductor Field Effect Transistors

Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.

Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532&nbsp;nm while nonlinear absorption appears under 650&nbsp;nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8&nbsp;m/W and 4.9 × 10–8&nbsp;m/W at 532 and 650&nbsp;nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbOx/Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100 mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbOx/Ti/Pt device has a great potential to drive RRAM in the V-point structure.

To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbOx/Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100&nbsp;mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbOx/Ti/Pt device has a great potential to drive RRAM in the V-point structure.

Research on Improving the Working Current of NbOx-Based Selector by Inserting a Ti Layer

Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by VGS. The current generated under dark conditions could also be regulated by VGS and tended to constant when the regulation of VGS was reaching saturation. Meanwhile, VGS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.

Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by VGS. The current generated under dark conditions could also be regulated by VGS and tended to constant when the regulation of VGS was reaching saturation. Meanwhile, VGS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5&nbsp;A/W, suggesting a valuable application in solar-blind UV photodetectors.