In contrast to conventional semiconductor devices, spintronic devices, which utilize electronic spin or both electronic spin and charge, have the advantages of high-speed, low-consumption, and versatility. The generation, detection and manipulation of spin are the key to develop spintronic devices. Therefore, spintronic materials with high spin polarization and high Curie temperature are required, and spintronic devices with peculiar spin transport properties are explored, i.e. high tunnel magnetoresistance, spin filtering effect, spin diode effect, spin Seebeck effect, and anomalous Nernst effect, etc. In addition, in the past decade, graphene-like atomically thin magnetic materials have promoted the development of 2D spintronic devices.
For novel spintronic materials, high spin polarization and high Curie temperature are required. The promising candidates are half-metals, spin gapless semiconductors, magnetic bipolar semiconductors, including bulk and low-dimensional systems, pristine and doped systems. Some strategies such as the strain, the electric field and the heterostructure can be used to increase the spin polarization and the Curie temperature. To achieve high-performance spintronic devices, one can select the high-spin-polarized materials as the electrodes, tune the thickness of the scattering region, or apply a gate voltage to the device.
We welcome Original Research, Review, Mini Review and Perspective articles on themes including, but not limited to:
1. Half-metals;
2. Spin gapless semiconductors;
3. Surface magnetism and interface magnetism;
4. 2D magnetism;
5. Magnetic heterostructures;
6. Magnetic tunnel junctions;
7. Spin Seebeck effect;
8. Anomalous Nernst effect;
9. Wyle semimetal.
In contrast to conventional semiconductor devices, spintronic devices, which utilize electronic spin or both electronic spin and charge, have the advantages of high-speed, low-consumption, and versatility. The generation, detection and manipulation of spin are the key to develop spintronic devices. Therefore, spintronic materials with high spin polarization and high Curie temperature are required, and spintronic devices with peculiar spin transport properties are explored, i.e. high tunnel magnetoresistance, spin filtering effect, spin diode effect, spin Seebeck effect, and anomalous Nernst effect, etc. In addition, in the past decade, graphene-like atomically thin magnetic materials have promoted the development of 2D spintronic devices.
For novel spintronic materials, high spin polarization and high Curie temperature are required. The promising candidates are half-metals, spin gapless semiconductors, magnetic bipolar semiconductors, including bulk and low-dimensional systems, pristine and doped systems. Some strategies such as the strain, the electric field and the heterostructure can be used to increase the spin polarization and the Curie temperature. To achieve high-performance spintronic devices, one can select the high-spin-polarized materials as the electrodes, tune the thickness of the scattering region, or apply a gate voltage to the device.
We welcome Original Research, Review, Mini Review and Perspective articles on themes including, but not limited to:
1. Half-metals;
2. Spin gapless semiconductors;
3. Surface magnetism and interface magnetism;
4. 2D magnetism;
5. Magnetic heterostructures;
6. Magnetic tunnel junctions;
7. Spin Seebeck effect;
8. Anomalous Nernst effect;
9. Wyle semimetal.
