In the past years, metal halide perovskite materials have shown great potential in optoelectronic devices, including solar cells, photodetectors, light emission diodes, X-ray detectors, etc. The outstanding device performance is attributed to the superior properties of perovskite materials, such as high absorption coefficient, low defect density, high carrier mobility, large carrier lifetime, and long diffusion length. Thus far, most perovskite optoelectronic devices are based on polycrystalline thin films which contain large amounts of grain boundaries. The existence of grain boundaries is highly detrimental to the optoelectronic properties and stability of the polycrystalline thin films, thus hindering further improvement of the performance and stability of perovskite optoelectronic devices. Due to the absence of grain boundaries, perovskite single crystals have demonstrated better optoelectronic properties and stability than polycrystalline thin films. Therefore, perovskite single crystals are a promising option for high-performance and stable optoelectronic devices.
Perovskite single crystals have different morphologies: bulk single crystals, micro single crystals, single crystal thin films, single crystal wire/plate, etc. The optoelectronic applications of perovskite single crystals correlate intimately with their morphology. For example, centimeter-sized perovskite bulk single crystals are ideal candidates for high-energy radiation detection due to their superior optoelectronic properties, large thickness and the existence of heavy atoms. However, their thickness is far greater than the carrier diffusion length, causing ineffective carrier transport and collection. To overcome the obstacle, single crystal thin film with a thickness similar to the carrier diffusion length should be developed.
This Research Topic focuses on perovskite single crystals, including growth, fundamental understanding, and optoelectronic applications. We encourage researchers working in these fields to submit their latest Original Research, Mini Review, or Perspective articles dealing with themes that include, but are not limited to:
• Synthesis of lead-free perovskite single-crystal materials
• Morphology control of perovskite single crystals: bulk single crystals, single crystal thin film, single crystal wire/plate, microcrystal, etc.
• Understanding of the fundamental properties of perovskite single crystals
• Perovskite single crystal photodetectors
• Perovskite single crystal solar cells
• Perovskite single crystal high energy radiation detectors
• Perovskite single crystal field effect transistors
In the past years, metal halide perovskite materials have shown great potential in optoelectronic devices, including solar cells, photodetectors, light emission diodes, X-ray detectors, etc. The outstanding device performance is attributed to the superior properties of perovskite materials, such as high absorption coefficient, low defect density, high carrier mobility, large carrier lifetime, and long diffusion length. Thus far, most perovskite optoelectronic devices are based on polycrystalline thin films which contain large amounts of grain boundaries. The existence of grain boundaries is highly detrimental to the optoelectronic properties and stability of the polycrystalline thin films, thus hindering further improvement of the performance and stability of perovskite optoelectronic devices. Due to the absence of grain boundaries, perovskite single crystals have demonstrated better optoelectronic properties and stability than polycrystalline thin films. Therefore, perovskite single crystals are a promising option for high-performance and stable optoelectronic devices.
Perovskite single crystals have different morphologies: bulk single crystals, micro single crystals, single crystal thin films, single crystal wire/plate, etc. The optoelectronic applications of perovskite single crystals correlate intimately with their morphology. For example, centimeter-sized perovskite bulk single crystals are ideal candidates for high-energy radiation detection due to their superior optoelectronic properties, large thickness and the existence of heavy atoms. However, their thickness is far greater than the carrier diffusion length, causing ineffective carrier transport and collection. To overcome the obstacle, single crystal thin film with a thickness similar to the carrier diffusion length should be developed.
This Research Topic focuses on perovskite single crystals, including growth, fundamental understanding, and optoelectronic applications. We encourage researchers working in these fields to submit their latest Original Research, Mini Review, or Perspective articles dealing with themes that include, but are not limited to:
• Synthesis of lead-free perovskite single-crystal materials
• Morphology control of perovskite single crystals: bulk single crystals, single crystal thin film, single crystal wire/plate, microcrystal, etc.
• Understanding of the fundamental properties of perovskite single crystals
• Perovskite single crystal photodetectors
• Perovskite single crystal solar cells
• Perovskite single crystal high energy radiation detectors
• Perovskite single crystal field effect transistors
