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MINI REVIEW article

Front. Sens.
Sec. Sensor Devices
Volume 5 - 2024 | doi: 10.3389/fsens.2024.1521727
This article is part of the Research Topic Engineered 2D Nanomaterial based Diagnostic Platforms for Human Disease Detection View all articles

Advancements in NIR Sensing for Tuberculosis Detection Using Dilute III-V Semiconductors: Current Status and Future Prospects

Provisionally accepted
  • 1 Materials Science and Engineering Directorate, Bio and Emerging Technology Institute, 5954, Addis Ababa, Ethiopia, ADDIS ABABA, Ethiopia
  • 2 Health Biotechnology Directorate, Bio and Emerging Technology Institute, 5954, Addis Ababa, Ethiopia, ADDIS ABABA, Ethiopia
  • 3 Nanotechnology Innovation Centre, Advanced Materials Division, 200 Malibongwe Drive, Mintek, Johannesburg, Gauteng, South Africa, Johannesburg, South Africa

The final, formatted version of the article will be published soon.

    This mini-review focuses on the use of dilute III-V semiconductors for near-infrared (NIR) sensing and the detection of tuberculosis (TB) in both humans and animals. These composite materials could greatly improve the sensitivity and efficiency of NIR detection. Well, we start off with the effects of TB, old methods of detecting it, and the rise of NIR sensing technologies. The significance of dilute III-V semiconductors for NIR sensing is discussed and the fabrication, properties, and performance of these semiconductors with organic matrices is explored. In this study we test the efficiency of NIR sensors in detecting TB across different species, and discuss the problems and drawbacks that are inherent in the use of these sensors. Lastly, we offer some suggestions for the field of future research and development, stressing the importance of this need for constant innovation. The purpose of this is to hopefully show the possible uses of these hybrid materials, and how they can enhance NIR sensitivity, and open the door to new diagnostic platforms.

    Keywords: Near-Infrared (NIR) sensing, Tuberculosis (TB) detection, dilute III-V semiconductors, hybrid materials, Device integration, Diagnostic platforms

    Received: 02 Nov 2024; Accepted: 11 Dec 2024.

    Copyright: © 2024 Mamo, Zigyalew, Emamu, Ntsendwana and Sikhwivhilu. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence: Melaku Dereje Mamo, Materials Science and Engineering Directorate, Bio and Emerging Technology Institute, 5954, Addis Ababa, Ethiopia, ADDIS ABABA, Ethiopia

    Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.