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ORIGINAL RESEARCH article

Front. Plant Sci.
Sec. Plant Abiotic Stress
Volume 15 - 2024 | doi: 10.3389/fpls.2024.1421615
This article is part of the Research Topic New Advances of Silicon in the Soil-Plant System View all 3 articles

Increased absorption and use of nutrients induced by Si is an indicator for tolerance to water deficit in a common bean cultivar cultivated in the field with and without application of K

Provisionally accepted
  • 1 Instituto Federal de Educação, Ciência e Tecnologia do Tocantins (IFTO), Tocantis, Tocantins, Brazil
  • 2 São Paulo State University, São Paulo, São Paulo, Brazil

The final, formatted version of the article will be published soon.

    Reduced water content in the soil triggers physiological, biochemical, and morphological damage to plants, aggravated by nutritional deficiency. One possible strategy to mitigate this damage comprises the use of silicon (Si). This study investigated whether Si can mitigate the damage caused by water deficit through nutritional mechanisms in bean plants grown under field conditions. Furthermore, it investigated whether its effectiveness is influenced by water availability in the soil and the Si dose supplied. Therefore, two split-plot experiments were carried out: with and without K supply. In both experiments, the treatments comprised a 3x4 factorial scheme. Treatments included three water regimes: 80% (no water deficit), 60% (moderate water deficit), and 40% (severe water deficit) of the soil's water retention capacity. Moreover, they comprised four doses of Si supplied via fertigation: 0, 4, 8, and 12 kg ha -1 , arranged in a randomized block design with four replications. The appropriate dose of Si to be applied increased with the severity of the water deficit, with the recommended dose being 6, 7, and 8 kg ha -1 of Si for adequate water conditions and moderate and severe water deficit, respectively.

    Keywords: Plant Nutrition, Water deficiency, Water effciency, benefical element, nutritional efficacy

    Received: 22 Apr 2024; Accepted: 15 Jul 2024.

    Copyright: © 2024 Teixeira, Gonzales Porras, Messias Ferreira, Prado, Oliveira, Carvalho and Palaretti. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence: Gelza C. Teixeira, Instituto Federal de Educação, Ciência e Tecnologia do Tocantins (IFTO), Tocantis, 77.760-000, Tocantins, Brazil

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