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ORIGINAL RESEARCH article
Front. Phys.
Sec. Condensed Matter Physics
Volume 12 - 2024 |
doi: 10.3389/fphy.2024.1524692
Resistance spikes of NiO/ZnO heterostructures in magnetic field
Provisionally accepted- Qingdao University, Qingdao, China
NiO/ZnO semiconductor heterostructures were prepared via electrospinning, with resistance measured under various magnetic fields. Resistance spikes at 300 K, 290 K, and 280 K showed responses of 1.3%, 5.2%, and 10.7%, respectively. The study explored the effects of magnetic field magnitude, direction, and light illumination on resistance variations. These phenomena may result from the coupling between the heterojunction and the magnetic field, along with changes in spin electron orientation. This work highlights the potential of using heterostructures and magnetic fields to modulate resistance, advancing optoelectronic and magnetoelectronic devices.
Keywords: Electrospinning, heterostructures, Magnetoresistance, electromagnetic induction, Resistance spikes
Received: 11 Nov 2024; Accepted: 30 Dec 2024.
Copyright: © 2024 Sun, Qiu, Gao, Cao, Wang, Han, Zhang and Long. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence:
Yun-Ze Long, Qingdao University, Qingdao, China
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