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ORIGINAL RESEARCH article

Front. Phys.
Sec. Optics and Photonics
Volume 12 - 2024 | doi: 10.3389/fphy.2024.1503269

Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems

Provisionally accepted
Pengzhan Zhang Pengzhan Zhang *Xinyu Liu Xinyu Liu Ling Zhang Ling Zhang Danbei Wang Danbei Wang Kongpin Wu Kongpin Wu Sake Wang Sake Wang
  • College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing, China

The final, formatted version of the article will be published soon.

    In our previous work, we deeply researched the absolute photoluminescence (PL) quantum yields of luminescent modulating a-SiNxOy films with various N/Si atom ratios under different measurement temperatures. In this work, we further systematically studied the temperature dependent kinetic processes of radiative and non-radiative recombinations in a-SiNxOy systems in the visible light range. First, we investigated the structure of a-SiNxOy films and obtained the concentrations of both trivalent Si and N-Si-O defects related dangling bonds through XPS, FTIR and EPR measurements. Then we further tested the transient fluorescence attenuation of a-SiNxOy films detected at different emission wavelengths. We found that the PL lifetimes of a-SiNxOy films vary with the change of N-Si-O defect state concentrations, which is different from the typical PL decay characteristics of band tail related a-SiNx films previously reported. By combining the resulting PL IQE values with the ns-PL lifetimes, we further intensively redetermined the radiative and non-radiative recombination lifetimes of a-SiNxOy systems. The related radiative recombination rates were obtained (kr~108 s-1), which can be compared to the results in the direct band gap.

    Keywords: a-SiN x O y, PL lifetimes, defect states, Radiative recombination rates, non-radiative recombination lifetimes

    Received: 28 Sep 2024; Accepted: 23 Oct 2024.

    Copyright: © 2024 Zhang, Liu, Zhang, Wang, Wu and Wang. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence: Pengzhan Zhang, College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing, China

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