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ORIGINAL RESEARCH article

Front. Phys., 01 June 2023
Sec. Mathematical Physics

Volumetric absorption illumination induced by laser radiation in a 2D thermoelastic microelongated semiconductor body with temperature-dependent properties

Ismail M. Tayel
Ismail M. Tayel1*Jawdat Alebraheem
Jawdat Alebraheem1*Mogtaba Mohammed,
Mogtaba Mohammed1,2*Khaled Lotfy,
Khaled Lotfy3,4*Alaa A. El-Bary,
Alaa A. El-Bary5,6*
  • 1Department of Mathematics, College of Science Al-Zulfi, Majmaah University, Al Majmaah, Saudi Arabia
  • 2Department of Mathematics, College of Science Sudan University of Science and Technology, Khartoum, Sudan
  • 3Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt
  • 4Department of Mathematics, Faculty of Science, Taibah University, Madinah, Saudi Arabia
  • 5Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt
  • 6National Committee for Mathematics, Academy of Scientific Research and Technology, Cairo, Egypt

In this paper, we construct a new model based on the coupling of thermoelasticity, plasma, and microelongation effect under volumetric absorption of laser pulse. Three different thermoelasticity theories are applied to construct the new model in a 2D thermoelastic semiconducting medium whose properties are temperature-dependent. The medium surface is exposed to laser radiation having spatial and temporal Gaussian distributions; in addition, the surface is considered traction-free. The general solutions were obtained analytically via Laplace and Fourier transformations; for Laplace inverse, we use the well-known Riemann sum approximation. As an application and consistency validation, silicon material is used.

1 Introduction

Biot is credited by developing the coupling between temperature and strain in his formulation of the classical coupled theory of thermoelasticity (CTE) in 1956 [1]. However, a flaw in this theory gave rise to the concept of generalized thermoelasticity; see, for instance, [2]. The first generalization was proposed by Lord and Shulman (LS) [3]; instead of relying on Fourier’s law, LS’s theory relies on another heat conduction law involving relaxation time [4, 5]. Hence, the produced thermal waves are physically accepted; see [6]. Due to its application in thermoelasticity, this theory has been widely used in many studies [7, 8]. Green and Lindsay (GL) [9] followed LS’s theory with a generalization with two relaxation times that considered temperature–rate dependence. This theory has been applied in many problems of thermoelasticity, making it an essential part of its development; see [10, 11].

Semiconductor materials, which have a wide range of applications in physics and engineering, are among the most significant materials that have directly influenced technological advancement [12, 13]. Thermoelasticity (TE) and the deformation of electrons DE are the two basic mechanisms that are produced when a semiconductor surface is subjected to a laser beam; for further information, see [14]. Recently, the relationship involving TE and DE has become necessary, which increases the viability of using generalized theories to study wave propagation in a semiconductor medium [15]. Various generalizations were used by Lotfy and Lotfy et al. [1618] to examine the photothermal illumination phenomenon in various results. Ezzat [19] used a novel model within the context of time-fractional derivatives to examine the impacts of combined plasma and thermal waves in a viscoelastic material. In semi-infinite semiconductor materials with such a cylindrical cavity exposed to thermal shock under a simulated model considering variable thermal conductivity, for the investigation of photothermoelastic consequences, we refer to [20]. Youssef and El-Bary [21] addressed a two-dimensional semiconductor material cylinder driven by ramp-type heat through the use of the LS framework to discuss photothermoelastic coupling. More recently, Tayel and Lotfy [22] and Mohammed and Tayel [23] studied the photothermal effects induced by a laser pulse under the new modification of Green and Lindsay (MGL).

Due to the numerous uses of thermoelasticity, the study of materials whose characteristics are temperature-dependent has become increasingly important. The overwhelming majority of results now available on thermoelasticity are achieved for temperature-independent material, despite the fact that components fluctuate at high temperatures; for examples, see [24, 25] and the references within. In terms of the generalized thermoelasticity, some valuable works with significant results for understanding the effect of the influences of temperature-dependent features could be seen in [2629].

Many applications have been introduced in the fields of science and engineering based on special features of lasers. In material processing various fields such as cutting, drilling of holes, glazing of materials, and spot welding, high-power lasers are utilized [30, 31]. In semiconductor material, excitation caused by laser radiation generates three different waves: thermal, elastic, and plasma waves. Several papers have discussed the transportation processes induced by the laser pulse in semiconductor materials; see [3236].

Microelongated materials can be found in many branches of material science; some examples of microelongated media involve solid–liquid crystals, structural materials reinforced with crushed elastic fibers, and porous materials having pores stuffed to the gills with gases or non-viscous fluid. It should be noted that numerous effects on microelongated thermoelasticity, such as initial stress, and also comparing relaxation times including their effects on all physical parameters, have not received much attention; see [3741].

In this paper, we shall discuss the volumetric absorption of laser radiation in a 2D thermoelastic microelongated semiconducting half space whose properties are temperature-dependent. We introduce a novel model based on the coupling of TE, plasma, and microelongation waves by means of three different theories of thermoelasticity, namely, CTE, LS, and GL. Moreover, the temperature-dependent properties are investigated through all the aforementioned waves.

2 Problem setting and basic equations

In what follows, we introduce the system of governing equations that consider the microelongation effect coupled with plasma and TE response. We start by

Energy is represented as follows [38]:

κT,iiρCEn1+τ0tṪγ1T0n1+n0τ0tu̇i,i+EgτNγ2T0φ̇=n1+n0τ0tQx,z,t.(1)

The plasma wave equation, which depicts the interaction between plasma and temperature, is as follows [13]:

Ṅ=DEN,iiNτ+κT.(2)

The equation of motion is given as follows [18, 42]:

λ+μuj,ij+μui,jj+λ1φ,iγ11+v0tT,iδnN,i=ρüi.(3)

Microelongation is represented as follows [18, 42]:

αφ,iiλ2φλ1uj,j+γ21+v0tT=12jρφ̈.(4)

The microelongation constitutive equation is as follows [4345]:

σij=λ1φ+λur,rδij+2μuj,iγ11+v0tTδij3λ+2μdnNδij,mi=a0φ,i,sσ=λui,iγ21+v0tT+3λ+2μdnNδ2i+λ1φ..(5)

where κ=1τn0T, γ1 = (3λ + 2 μ)αt1, δn = (3λ + 2μ)dn, and γ2 = (3λ + 2 μ)αt2. For a volumetric technique of heating, we let

Qx,z,t=A0q0ξeξxQz,t.

The aforementioned system of equations can be classified according to the values of n0 and n1 as follows:

1. The classical coupled theory of thermoelasticity (CTE), when n1 = 1, n0 = 0, τ0 =, and v0 = 0.

2. Lord and Shulman theory (LS) when n1 = n0 = 1, v0 = 0, and τ0 > 0.

3. Green and Lindsay theory (GL), when n1 = 1, n0 = 0, and v0 > τ0 > 0.

Consider a TE isotropic and homogeneous microelongated semiconducting 2D half space to be at a reference temperature T0. The medium surface x = 0 is subjected to a laser pulse and considered traction-free.

Due to the two-dimensional effect of ED and TE deformations, we assume that our primary fields depend on (x, z, t). In this setting, the scalar microelongational function in the xz-plane and displacement tensor ui will be written as follows:

φ=φx,z,tu=u,0,w,u=ux,z,t,w=wx,z,t.(6)

Thus, the cubic dilatation is expressed as follows:

e=ux+wz.(7)

Let us assume the following parameters to be temperature-dependent; see [28, 46]:

k,γ1,Eg,γ2,DE,κ,λ,μ,λ1,λ2,δn,α=k0,γ10,Eg0,γ20,DE0,κ0,λ0,μ0,λ10,λ20,δn0,α0fT0,(8)

where f(T0), a given linear dimensionless function, takes the form

fT0=1ζfT0,(9)

and ζ is an empirical parameter.

Consequently, our system becomes (2)–(1):

k02θρCEfT0n1+τ0tθtγ10T0n1+n0τ0tet+Eg0τNγ20T0φ̇=1fT0A0q0ξn1+n0τ0teξxQz,t,(10)
DE02NNfT0τ+κ0θ=1fT0Nt,(11)
α02φλ20φλ10e+γ201+v0tθ=12fT0jρφ̈,(12)
λ0+μ0ex+μ02u+λ10φxγ101+v0tθxδn0Nx=ρfT02ut2,(13)

and

λ0+μ0ez+μ00w+λ10φzγ101+v0tθzδn0Nz=ρfT02wt2.(14)
σxx=fT02μ0ux+λ0eγ101+vtTδn0N+λ10φ,σzz=fT02μ0wz+λ0eγ101+vtTδn0N+λ10φ,σyy=fT0λ0eγ101+vtTδn0N+λ10φ,σxz=μ0fT0uz+wx.,(15)

where θ = TT0 is the increment of the temperature.

We now introduce the initial and boundary conditions for the considered problem as follows:The initial conditions are

θ=θt=0,N=Nt=0,u,w=u,wt,ϕ=ϕt=0,(16)

and the boundary conditions become

θx0,z,t=0,DENx0,z,t=s0N0,z,t,σxx0,z,t=σxz0,z,t=0,ϕ0,z,t=0,(17)

where s0 is the surface recombination velocity.It is possible to use dimensionless variables to make the computations simpler, such as

Ñ=δnT0γ10N,x̃i=ω*C1xi,ũi=ρC1ω*T0γ10ui,t̃,τ̃0,ν̃0=ω*t,τ0,ν0,C12=2μ+λρ,θ̃=θT0,σ̃ij=σijT0γ10,φ̃=ρC12T0γ10φ,ω*=ρCEC12K,C22=μρ,.(18)

In computations, the primary governing equations are simplified using Eq. 18, which results in the following:

2θϵ1n1+τ0tθtϵ2n1+n0τ0tet+ϵ3Nϵ4φ̇=ϵ1A0q0ξn1+n0τ0teξxQz,t,(19)
2ϵ5ϵ6tN+ϵ7θ=0,(20)
2φC3φC5e+C61+v0tθC4φ̈=0,(21)
λ+μρC2ex+μρc22u+λ10ρc2φx1+v0tθxNx=1fT02ut2,(22)

and

λ+μρC2ez+μρc22w+λ10ρc2φz1+v0tθzNz=1fT02wt2.(23)

The constitutive relations according to Eq. 5 can be written as follows:

σxx=fT0a2ux+a3e1+v0tθN+a1φ,(24)
σzz=fT0a2wz+a3e1+v0tθN+a1φ,(25)
σyy=fT0a3e1+v0tθN+a1φ,(26)
σxz=a4fT0uz+wx,(27)

and the boundary conditions become

θx0,z,t=0,Nx0,z,t=ϵ8N0,z,t,σxx0,z,t=σxz0,z,t=0,ϕ0,z,t=0..(28)

Here, we combine Eqs. 22, 23 to become

2e+a12φ1+v0t2θ2N=ϵ12et2,(29)

where

ϵ1=1fT0,ϵ2=T0γ102ρk0ω,ϵ3=Eg0γ10C12τδn0k0ω,ϵ4=T0γ10γ20ρk0ω
ϵ5=C12τDE0ωfT0,ϵ6=C12DE0ωfT0,ϵ7=k0C12δn0τDE0γ10ω,ϵ8=s0C1DE0wfT0,
C3=λ20C12α0ω2,C4=ρJC122fT0α0,C5=λ10C12α0ω2,C6=γ20ρC4α0γ10ω2
a1=λ10ρC12,a2=2μ0ρC12,a3=λ0ρC12,a4=a22.

3 Problem solution

The method of integral transformation will be applied using the first Laplace transform for the variable of t and then the Fourier transform for the coordinate z.Now, introduce Laplace transform

f̄x,z,s=0fx,z,testdt.(30)

Then, Fourier transform

f̄̂x,p,s=12πf̄x,z,seipzdz.(31)

Applying Fourier and Laplace transformations for Eqs. 1921 and Eq. 22, this gives the following system:

D2p2β1θ̄̂β2ē̂+ϵ3N̄̂ϵ4sφ̄̂=A0q0ξβ7eξxQ̄̂p,s,(32)
D2p2β3N̄̂+ϵ7θ̄̂=0,(33)
D2p2β4φ̄̂C5ē̂+β5θ̄̂=0,(34)
D2p2ϵ1s2ē̂+a1D2p2φ̄̂β6D2p2θ̄̂D2p2N̄̂=0,(35)

where Q̄̂(p,s) is Q(z, t) in the transformed domain, and

β1=ϵ1sn1+sτ0,β2=ϵ2sn1+n0sτ0,β3=ϵ5+ϵ6s,β4=C3+C4s2,β5=C61+v0s,β6=1+v0s,β7=ϵ1n1+sτ0.

Eliminating θ̄̂ and ē̂ from Eqs. 3235, we obtain the following:

c5D2p2β1D2p2β3ϵ3ϵ7β2β5D2p2β3N̄̂+β2ϵ7D2p2β4+ϵ4ϵ7c5sφ̄̂=A0q0c5ϵ7β7ξeξxQ̄̂p,s,(36)

and

ϵ7D2p2ϵ1s2D2p2β4+a1c5D2p2φ̄̂+D2p2β3β5D2p2ϵ1s2+c5β6D2p2ϵ7c5D2p2N̄̂=0.(37)

Eliminating φ̄̂ from (36) and (37), we get

D8b1D6+b2D4b3D2+b4N̄̂=G1eξx,(38)

where

G1=A0q0β7ϵ7ξ2p2ϵ1s2ξ2p2β4+a1c5ξ2p2ξQ̄̂p,s

and

b1=4p2+a1C5β1β3β4β2β6s2ϵ1,
b2=6p4+3β3p2+3β4p2+3β2β6p2+3s2ϵ1p2+β3β4sC5β6ϵ4a1C53p2+β1+β3+β2β5+β2β3β6+β2β4β6+β2ϵ7+s2β3ϵ1+s2β4ϵ1+β13p2+β3+β4+s2ϵ1+sβ5ϵ4ϵ3ϵ7,
b3=4p63β3p43β4p43β2β6p43s2ϵ1p42β3β4p22β2β3β6p22β2β4β6p22s2β3ϵ1p22s2β4ϵ1p22sβ5ϵ4p2+2sC5β6ϵ4p22β2ϵ7p2+2ϵ3ϵ7p2β2β3β4β6s2β3β4ϵ1+β4ϵ3ϵ7β2β4ϵ7β13p4+2s2ϵ1p2+β42p2+s2ϵ1+β32p2+β4+s2ϵ1+s2ϵ1ϵ3ϵ7+sC5ϵ4ϵ7sβ3β5ϵ4+sC5β3β6ϵ4s3β5ϵ1ϵ4+a1β22p2+β3β5+C53p4+2β3p2+β12p2+β3ϵ3ϵ7,
b4=p8+β3p6+β4p6+β2β6p6+s2ϵ1p6+β3β4p4+β2β3β6p4+s2β3ϵ1p4+s2β4ϵ1p4+sβ5ϵ4p4sC5β6ϵ4p4+β2ϵ7p4ϵ3ϵ7p4+β2β3β4β6p2+s2β3β4ϵ1p2+sβ3β5ϵ4p2sC5β3β6ϵ4p2+s3β5ϵ1ϵ4p2+β2β4β6p4s2ϵ1ϵ3ϵ7p2sC5ϵ4ϵ7p2+β2β4ϵ7p2β4ϵ3ϵ7p2+β1p2+β3p2+β4p2+s2ϵ1+s3β3β5ϵ1ϵ4s2β4ϵ1ϵ3ϵ7a1β2p2+β3β5+C5p4+β3p2+β1p2+β3ϵ3ϵ7p2.

Factoring Eq. 38, we obtain

D2ki2N̄̂=G1eξx,(39)

where ki2(i=1,,4) are the roots of the characteristic equation.

Eq. 39 has the following solution:

N̄̂x=i=14Bip,sekix+H1ξ,seξx,(40)

where

H1=G1ξ2ki2.

The solution in terms of φ̄̂ is obtained in a similar manner; we have

D8b1D6+b2D4b3D2+b4φ̄̂=G2eξx,(41)

where

G2=A0q0β7ϵ7ξ2p2β3β5ξ2p2ϵ1s2+c5β6ξ2p2ϵ7c5ξ2p2ξeξxQ̄̂p,s.

Eq. 41 is solved as follows:

φ̄̂x=i=14ψiBip,sekix+H2eξx,(42)

where

H2=G2ξ2ki2,i=1,,4,

where

ψi=ki2p2β3β5ki2p2ϵ1s2+c5β6ki2p2ϵ7c5ki2p2ϵ7ki2p2ϵ1s2ki2p2β4+a1c5ki2p2.(43)

Using Eq. 33, we have

θ̄̂x=i=14ΓiBip,sekix+H3eξx,(44)

where

Γi=ki2p2β3ϵ7 and H3=ξ2p2β3ϵ7H1.(45)

In a similar way, we get

ē̂x=i=14ΛiBip,sekix+H4eξx,(46)

where

Λi=1C5ϵ7ϵ7ki2p2β4ψiβ5ki2p2β3(47)

and

H4=1C5ϵ7ϵ7ξ2p2β4H2β5ξ2p2β3H1.(48)

As for the displacement, Eq. 22 can be written as follows:

2u+a5ex+a1ϕxa61+v0tθxa6Nx=a72ut2,(49)

where a5=λ0+μ0μ0, a6=ρC12μ0, and a7 = a6ϵ1.

Using Laplace and Fourier transformation to the last equation, one gets

D2p2a7s2ū̂=a5ē̂xa1ϕ̄̂x+a61+v0sθ̄̂x+a6N̄̂x.(50)

The solution of the non-homogeneous ordinary differential Eq. 50 gives

ū̂=i=14kiΩiBiekixki2p2a7s2ξJeξxξ2p2a7s2+Reqx,(51)

where

Ωi=a5Λia1ψi+a61+ν0sΓi+a6,
J=a5H4a1H2+a61+ν0sH3+H1,

and

q=p2a7s2.

To get the other components, namely, w̄̂, we will use Eq. 7 in the transformed domain; we have

w̄̂=1ipi=14Λiki2Ωiki2P2a7s2Biekix+H4ξ2Jξ2P2a7s2eξx+Rqeqx.(52)

Here, we consider the stresses related to the boundary conditions only, so we have

σ̄̂xx=fT0σ1iBiekix+σ1*eξxqReqx,(53)
σ̄̂xz=a4fT0ipσ2iBiekix+σ2*eξxq*Reqx,(54)

where

σ1i=a2ki2Ωiki2p2a7s2+a3Λi1+ν0sΓi+a1ψi1,(55)
σ1*=a2ξ2Jξ2P2a7s2+a3H41+ν0sH3+a1H2H1,(56)
σ2i=kiΛiki2+p2ki2p2a7s2,(57)
σ2*=ξH4ξ2+p2ξ2p2a7s2,(58)

and

q*=2p2+a7s2.(59)

Now, to attain the constants Bi, (i = 1, …, 4) and R, we use (28) to obtain the following system:

kiΓiBi=ξH3,ki+ϵ8Bi=ξ+ϵ8H1,σi1BiqR=σ1*,σi2Biq*R=σ2*ψiBi=H2.(60)

From this, we complete the solution.

4 Inverse of the transformation

In this section, we obtain the inverse of the solutions derived in the aforementioned section; we start by applying the inverse Fourier transform using the following formula:

f̄x,z,s=12πf̄̂x,p,seipzdp,(61)

where f̄(x,z,s) is understood in the sense of Laplace transform. After that, an inverse by means of Laplace is needed; for this, we use the well-known Riemann sum approximation:

fx,z,t=eϕtt12f̄x,z,ϕ+Ren=1K1nf̄x,z,ϕ+inπt.(62)

For a faster convergence, we let ϕ = 4.7/t; see [47].

5 Special case

In order to increase the visibility of our results, we shall consider a special case when obtaining the numerical results. In particular, we neglect the effect of microelongation, i.e., we take λ10=λ20=γ20=0.

6 Application

Consider a silicon material’s half-space being subjected to a laser beam with a Gaussian profile as

Qz,t=Vz.ηt,(63)

where V(z)=ez2a2 and η(t)=etbd2.

The following constants, which are based on [48], will be used to calculate the surface temperature θ(0, t), temperature θ, carrier density N displacement u, and stresses σxx and σxz.

αt1=2.59×106K1k=156W/(m×K)T0=800Kλ=3.64×1010N/m2ρ=2330kg/m3τ1=0.001μ=5.46×1010N/m2Eg0=1.11eVτ=105sCE=695J/(kg×K)n0=1020m3δ0=2m/sDE=2.5×103m2/sa=3×103sA0=0.69α10=9×1031m3τ0=0.00075b=103s.

7 Numerical investigation

The computational results are divided into two groups. Group A shows the effect of the temperature-dependent properties for LS theory, while group B describes the consistency of the results through three different models. Through this, all the calculations are carried out for t = 4 × 10−3 and z = 0.0001.

Figure 1 is combined of two sub-graphs. Figure 1A represents θ/q0 at t = 4 × 10−3 for different ζ values, namely, ζ = 0, ζ = 5 × 10−4 and ζ = 8 × 10−4 for LS theory. Figure 1B depicts θ/q0 at t = 4 × 10−3 for a fixed ζ value, that is, ζ = 5 × 10−4 by taking into account three different models: LS, CTE, and GL. From the two sub-figures, we note that the temperature reached its maximum at the irradiated surface and then declined inside the medium until it totally vanishes. Figure 1A shows that the temperature increases as ζ increases, and the penetration inside the medium decreases as ζ increases. Figure 1B shows the GL model possessing the maximum temperature at the surface with lower penetration and that CTE has the maximum penetration into the medium; it is also noted that the LS model has a weak slope near the surface.

FIGURE 1
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FIGURE 1. Spatial temperature distribution per q0 at t = 4 × 10−3 for the aforementioned two cases.

Figure 2 contains two sub-figures, these are as follows: Figure 2A, which displays the temporal surface temperature θ(0, 0.0001, t) per q0 for different ζ values, namely, ζ = 0, ζ = 5 × 10−4 and ζ = 8 × 10−4 for LS theory, and Figure 1B, which describes the temporal surface temperature θ(0, 0.0001, t) per q0 for a fixed ζ value, that is, ζ = 5 × 10−4 considering the three models. The general behavior of the two sub-figures could be stated in the following statement“ The temperature increases until it achieves its maximum with a notably shift from the maximum of laser pulse; after that decreases but it will not be totally eliminated, see [30] for more explanation”. From Figure 2A, we note that the temperature achieves its peak at a longer time when ζ is small enough, which makes the peak value increase with ζ. We also note that the peak gets closer to the profile with greater ζ. At the same time, the curves preserve their behavior even after the laser turns off. In Figure 2B, we see that the LS model gets its peak at a time closer to the maximum of η(t). In addition, this model has the greatest maximum temperature compared with other two models.

FIGURE 2
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FIGURE 2. Temporal surface temperature θ(0, 0.0001, t) per q0 for the aforementioned two cases.

The spatial carrier density distribution N represented in Figure 3, as the previous sub-Figure 3A, outlines the carrier distribution N for ζ = 0, ζ = 5 × 10−4 and ζ = 8 × 10−4 at time t = 4 × 10−3, and sub-Figure 3B describes the carrier density distribution N for a fixed ζ value, that is, ζ = 5 × 10−4, considering the three models. The effect that took place by the parameter ζ can be clearly seen in Figure 3A that it is inversely proportional to the plasma. In Figure 3B, the model of LS possesses the greatest carrier density at the surface, while the GL model possesses the lower carrier density. Moreover, it is noted that penetration is approximately the same for the three models.

FIGURE 3
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FIGURE 3. Carrier density N(x, 1 × 10−4, 4 × 10−3) for the aforementioned two cases.

The spatial displacement u represented by Figure 4, as the previous sub-Figure 4A outlines the displacement distribution u for ζ = 0, ζ = 5 × 10−4 and ζ = 8 × 10−4 at time t = 4 × 10−3 and sub-Figure 4B describes the displacement distributions u for a fixed ζ value, that is, ζ = 5 × 10−4, considering the three models. The displacement appears in a region close to the surface and attains negative values; from Figure 4A that represents the effect of ζ, it is clearly seen that the displacement has the same value for all values of ζ at the surface and different penetration inside the medium. Figure 4B describes the case of the three mentioned models; it is noted that the GL model possesses the greatest displacement at the surface, while the CTE possesses the smallest displacement, and the penetration of the three models is slightly the same.

FIGURE 4
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FIGURE 4. Displacement distribution u(x, 0.0001, t) per q0 for the aforementioned two cases.

Figure 5 contains two sub-figures; these are as follows: Figure 5A, which displays the stress σxx per q0 for ζ = 0, ζ = 5 × 10−4 and ζ = 8 × 10−4 for LS theory, and Figure 5B, which describes the stress σxx per q0 for a fixed ζ = 5 × 10−4, considering the three models. In both cases, the figure contains a small sub-figure representing the stress distribution in a region close to the surface; this figure shows that the stress obeys the given boundary condition. As for Figure 5A, we see that the positive peak getting smaller as ζ increases. We note that all curves matched together on the illuminated surface until the positive peak is achieved; after that, for a larger ζ, the gradient gets steeper. We can also see that when ζ = 0, the penetration takes the largest value. In Figure 5B, the curve behavior is preserved as in Figure 5A, and the positive peak of the GL model is the greatest, while that of the CTE is the smallest; moreover, the penetration of the CTE is the greatest.

FIGURE 5
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FIGURE 5. Stress σxx per q0 for the aforementioned two cases.

Figure 6 contains two sub-figures; these are as follows: Figure 6A, which displays the stress σxz per q0 for ζ = 0, ζ = 5 × 10−4 and ζ = 8 × 10−4 for LS theory, and Figure 6B, which describes the stress σxz per q0 for a fixed ζ = 5 × 10−4, considering the three models. Figure 6A shows that the increment of ζ caused a delay in both negative and positive peaks. Figure 6B shows that the only model with a negative peak near to the surface is that of LS, and also, LS possesses the highest peaks in both cases (negative and positive peaks).

FIGURE 6
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FIGURE 6. Stress σxz per q0 for the aforementioned two cases.

8 Conclusion

In this paper, we introduced a fully coupled system of equations that represents thermal, plasma, elastic, and microelongation effects, and the novel system based on three different theories of thermoelasticity. This system has been applied to 2D TE microelongated semiconducting half space whose properties are temperature-dependent, considering the volumetric absorption illumination induced by a pulsed laser. From the forgoing discussions, we can conclude that

• The obtained results are in line with the physical interpretations.

• A clear effect for the temperature-dependent properties on all variables.

• The GL and CTE models consume more energy and take longer time than the LS model to achieve their peaks.

Data availability statement

The original contributions presented in the study are included in the article/Supplementary Material; further inquiries can be directed to the corresponding author.

Author contributions

KL: conceptualization and methodology. MM: software and data curation. IT: writing—original manuscript preparation. KL: supervision. JA: visualization and investigation. AE-B: software, validation, and writing—reviewing and editing. All authors contributed to the article and approved the submitted version.

Funding

The authors extend their appreciation to the deputyship for research and innovation, the Ministry of Education in Saudi Arabia, for funding this research work through the project number (IFP-2022-47).

Conflict of interest

The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

Publisher’s note

All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors, and the reviewers. Any product that may be evaluated in this article, or claim that may be made by its manufacturer, is not guaranteed or endorsed by the publisher.

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Glossary

Keywords: volumetric absorption, microelongation, semiconductors, photogeneration process, generalized thermoelasticity

Citation: Tayel IM, Alebraheem J, Mohammed M, Lotfy K and El-Bary AA (2023) Volumetric absorption illumination induced by laser radiation in a 2D thermoelastic microelongated semiconductor body with temperature-dependent properties. Front. Phys. 11:1213440. doi: 10.3389/fphy.2023.1213440

Received: 27 April 2023; Accepted: 16 May 2023;
Published: 01 June 2023.

Edited by:

Mahmoud Abdelrahman, Mansoura University, Egypt

Reviewed by:

Hamdy M. Youssef, Umm Al-Qura University, Saudi Arabia
Emad Awad, Alexandria University, Egypt

Copyright © 2023 Tayel, Alebraheem, Mohammed, Lotfy and El-Bary. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

*Correspondence: Ismail M. Tayel, i.tayel@mu.edu.sa; Jawdat Alebraheem, j.alebraheem@mu.edu.sa; Mogtaba Mohammed, mogtaba.m@mu.edu.sa; Khaled Lotfy, khlotfy_1@yahoo.com; Alaa A. El-Bary, aaelbary@aast.edu

Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.