AUTHOR=Ibukuro Kouta , Husain Muhammad Khaled , Li Zuo , Hillier Joseph , Liu Fayong , Tomita Isao , Tsuchiya Yoshishige , Rutt Harvey , Saito Shinichi TITLE=Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature JOURNAL=Frontiers in Physics VOLUME=7 YEAR=2019 URL=https://www.frontiersin.org/journals/physics/articles/10.3389/fphy.2019.00152 DOI=10.3389/fphy.2019.00152 ISSN=2296-424X ABSTRACT=

We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimized the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10 ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.