AUTHOR=Quindeau Andy , Hesse Dietrich , Alexe Marin 

TITLE=Programmable ferroelectric tunnel memristor

JOURNAL=Frontiers in Physics

VOLUME=Volume 2 - 2014

YEAR=2014

URL=https://www.frontiersin.org/journals/physics/articles/10.3389/fphy.2014.00007

DOI=10.3389/fphy.2014.00007

ISSN=2296-424X

ABSTRACT=We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.