AUTHOR=Quindeau Andy , Hesse Dietrich , Alexe Marin 

TITLE=Programmable ferroelectric tunnel memristor

JOURNAL=Frontiers in Physics

VOLUME=2

YEAR=2014

URL=https://www.frontiersin.org/journals/physics/articles/10.3389/fphy.2014.00007

DOI=10.3389/fphy.2014.00007

ISSN=2296-424X

ABSTRACT=<p>We report a programmable analog memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub> film sandwiched between La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10<sup>−7</sup> s. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter <italic>viz</italic>. the characteristic switching time and fully predicts the resistive states of this type of memristor.</p>