AUTHOR=Bai Ruobing , Liu Yihan , Zhang Bomin , Chen Beishan , Xiong Feng , Liu Haitao 

TITLE=DNA-based doping and fabrication of PN diodes

JOURNAL=Frontiers in Nanotechnology

VOLUME=6

YEAR=2024

URL=https://www.frontiersin.org/journals/nanotechnology/articles/10.3389/fnano.2024.1291328

DOI=10.3389/fnano.2024.1291328

ISSN=2673-3013

ABSTRACT=<p>This paper reports the fabrication of silicon PN diode by using DNA nanostructure as the etching template for SiO<sub>2</sub> and also as the <italic>n</italic>-dopant of Si. DNA nanotubes were deposited onto <italic>p</italic>-type silicon wafer that has a thermal SiO<sub>2</sub> layer. The DNA nanotubes catalyze the etching of SiO<sub>2</sub> by HF vapor to expose the underlying Si. The phosphate groups in the DNA nanotube were used as the doping source to locally <italic>n</italic>-dope the Si wafer to form vertical P-N junctions. Prototype PN diodes were fabricated and exhibited expected blockage behavior with a knee voltage of <italic>ca.</italic> 0.7 V. Our work highlights the potential of DNA nanotechnology in future fabrication of nanoelectronics.</p>