AUTHOR=Dhingra Archit 

TITLE=Layered GeI2: A wide-bandgap semiconductor for thermoelectric applications–A perspective

JOURNAL=Frontiers in Nanotechnology

VOLUME=4

YEAR=2022

URL=https://www.frontiersin.org/journals/nanotechnology/articles/10.3389/fnano.2022.1095291

DOI=10.3389/fnano.2022.1095291

ISSN=2673-3013

ABSTRACT=<p>Layered GeI<sub>2</sub> is a two-dimensional wide-bandgap van der Waals semiconductor, which is theorized to be a promising material for thermoelectric applications. While the value of the experimentally extrapolated indirect optical bandgap of GeI<sub>2</sub> is found to be consistent with the existing theoretical calculations, its potential as a thermoelectric material still lacks experimental validation. In this Perspective, recent experimental efforts aimed towards investigating its dynamical properties and tuning its bandgap further, <italic>via</italic> intercalation, are discussed. A thorough understanding of its dynamical properties elucidates the extent of electron-phonon scattering in this system, knowledge of which is crucial in order to open pathways for future studies aiming to realize GeI<sub>2</sub>-based thermoelectric devices.</p>