AUTHOR=Rengifo Miguel , Aguirre Myriam H. , Sirena Martín , Lüders Ulrike , Rubi Diego 

TITLE=Epitaxial ferroelectric memristors integrated with silicon

JOURNAL=Frontiers in Nanotechnology

VOLUME=4

YEAR=2022

URL=https://www.frontiersin.org/journals/nanotechnology/articles/10.3389/fnano.2022.1092177

DOI=10.3389/fnano.2022.1092177

ISSN=2673-3013

ABSTRACT=<p>Neuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTiO<sub>3</sub>-based memristors integrated with silicon. After proving the ferroelectric character of BaTiO<sub>3</sub> we tested the memristive response of LaNiO<sub>3</sub>/BaTiO<sub>3</sub>/Pt microstructures and found a complex behavior which includes the co-existence of volatile and non-volatile effects, arising from the modulation of the BaTiO<sub>3</sub>/Pt Schottky interface by the direction of the polarization coupled to oxygen vacancy electromigration to/from the interface. This produces remanent resistance loops with tunable ON/OFF ratio and asymmetric resistance relaxations. These properties might be harnessed for the development of neuromorphic hardware compatible with existing silicon-based technology.</p>