AUTHOR=Ding Keyuan , Li Tianci , Chen Bin , Rao Feng 

TITLE=Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming

JOURNAL=Frontiers in Nanotechnology

VOLUME=3

YEAR=2021

URL=https://www.frontiersin.org/journals/nanotechnology/articles/10.3389/fnano.2021.649560

DOI=10.3389/fnano.2021.649560

ISSN=2673-3013

ABSTRACT=<p>Extending cycling endurance and suppressing programming noise of phase-change random-access memory (PCRAM) are the key challenges with respect to the development of nonvolatile working memory and high-accuracy neuromorphic computing devices. However, the large-scale atomic migration along electrical pulse direction in the unconstrained three-dimensional phase transitions of the phase-change materials (PCMs) induces big resistance fluctuations upon repeated programming and renders the classic PCRAM devices into premature failure with limited cycling endurance. Previous efforts of superlattice-like and superlattice PCM schemes cannot effectively resolve such issues. In this work, we demonstrated that, through fine-tuning the sputtering techniques, a phase-change heterostructure (PCH) of Sb<sub>2</sub>Te<sub>3</sub>/TiTe<sub>2</sub> can be successfully constructed. In contrast to its superlattice-like counterpart with inferior crystal quality, the well-textured PCH architecture ensures the reliable (well-confined) two-dimensional phase transitions, promoting an ultralow-noise and long-life operation of the PCRAM devices. Our study thus provides a useful reference for better manufacturing the PCH architecture and further exploring the excellent device performances and other new physics.</p>