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ORIGINAL RESEARCH article

Front. Mater.
Sec. Semiconducting Materials and Devices
Volume 11 - 2024 | doi: 10.3389/fmats.2024.1501000
This article is part of the Research Topic Advanced Nanomaterials and Devices for Brain-Inspired and Quantum Computing View all 6 articles

Process-dependent ferroelectric and memristive properties in polycrystalline Ca:HfO 2 -based devices

Provisionally accepted
Cristian Ferreyra Cristian Ferreyra 1Miguel Badillo Miguel Badillo 2María José Sánchez María José Sánchez 1Mónica Acuautla Mónica Acuautla 3Beatriz Noheda Beatriz Noheda 3Diego Rubi Diego Rubi 1*
  • 1 CONICET Institute of Nanoscience and Nanotechnology (CNEA), Buenos Aires, Buenos Aires, Argentina
  • 2 Polytechnic University of Milan, Milan, Lombardy, Italy
  • 3 University of Groningen, Groningen, Netherlands

The final, formatted version of the article will be published soon.

    Memristors are considered key building blocks for developing neuromorphic or in-memory computing hardware. Here, we study the ferroelectric and memristive response of Pt/Ca:HfO 2 /Pt devices fabricated on silicon by spin-coating from chemical solution deposition followed by a pyrolysis step and a final thermal treatment for crystallization at 800°C for 90 s. For pyrolysis temperature of 300°C, the annealed samples are ferroelectric while for 400°C a dielectric behavior is observed. For each case, we found a distinct, forming-free, memristive response. Ferroelectric devices can sustain polarization switching and memristive behavior simultaneously. Aided by numerical simulations, we describe the memristive behavior of ferroelectric devices arising from oxide-metal Schottky barriers modulation by both the direction of the electrical polarization and oxygen vacancy electromigration. For non-ferroelectric samples, only the latter effect controls the memristive behavior.

    Keywords: ferroelectrics, memristors, Oxides, Oxygen vacancies, neuromorphic computation

    Received: 24 Sep 2024; Accepted: 23 Dec 2024.

    Copyright: © 2024 Ferreyra, Badillo, Sánchez, Acuautla, Noheda and Rubi. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence: Diego Rubi, CONICET Institute of Nanoscience and Nanotechnology (CNEA), Buenos Aires, 1650, Buenos Aires, Argentina

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