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ORIGINAL RESEARCH article

Front. Mater.
Sec. Semiconducting Materials and Devices
Volume 11 - 2024 | doi: 10.3389/fmats.2024.1497540
This article is part of the Research Topic Anisotropic and Chiral Materials for Optoelectronic Devices View all articles

High-Performance Optoelectronic Devices Based on TeO x Nanowires: Synthesis, Characterization and Photodetection

Provisionally accepted
Jinggao Sui Jinggao Sui 1Xiang Lan Xiang Lan 2*Baihui Zhang Baihui Zhang 3Mianzeng Zhong Mianzeng Zhong 3*Guang Wang Guang Wang 4*Jinhui Cao Jinhui Cao 5*
  • 1 Defense Innovation Institute, Academy of Military Sciences, Beijing, China
  • 2 School of Materials Science and Engineering, Hunan University, Changsha, China
  • 3 Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, China
  • 4 Department of Physics, College of Sciences, National University of Defense Technology, Changsha, China
  • 5 School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha, Hunan Province, China

The final, formatted version of the article will be published soon.

    Low-dimensional nanomaterials have garnered significant interest for their unique electronic and optical properties, which are essential for advancing next-generation optoelectronic devices. Among these, tellurium suboxide (TeOx)-based nanowires (NWs), with their quasi-one-dimensional (1D) structure, offer distinct advantages in terms of charge transport and light absorption. In this study, we present a comprehensive investigation into the controlled synthesis, structural properties, and optoelectronic performance of TeOx nanowires. Nanowires were synthesized via chemical vapor deposition process and exhibited a high aspect ratio with excellent structural quality, confirmed through Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The TeOx nanowires demonstrated high crystallinity, smooth surface morphology, and consistent growth across the substrate, making them suitable for scalable device fabrication. The optoelectronic characterization of a fabricated photodetector, based on a single TeOx nanowire, revealed remarkable photoresponsivity and stability across a broad range of light intensities. These findings position TeOx nanowires as promising candidates for future optoelectronic devices such as photodetectors and optical sensors.

    Keywords: Chemical Vapor Deposition, Tellurium, Nanowires, optoelectronics, photodetectors

    Received: 17 Sep 2024; Accepted: 28 Oct 2024.

    Copyright: © 2024 Sui, Lan, Zhang, Zhong, Wang and Cao. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence:
    Xiang Lan, School of Materials Science and Engineering, Hunan University, Changsha, China
    Mianzeng Zhong, Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, China
    Guang Wang, Department of Physics, College of Sciences, National University of Defense Technology, Changsha, China
    Jinhui Cao, School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha, Hunan Province, China

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