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ORIGINAL RESEARCH article
Front. Mater.
Sec. Semiconducting Materials and Devices
Volume 11 - 2024 |
doi: 10.3389/fmats.2024.1497540
This article is part of the Research Topic Anisotropic and Chiral Materials for Optoelectronic Devices View all articles
High-Performance Optoelectronic Devices Based on TeO x Nanowires: Synthesis, Characterization and Photodetection
Provisionally accepted- 1 Defense Innovation Institute, Academy of Military Sciences, Beijing, China
- 2 School of Materials Science and Engineering, Hunan University, Changsha, China
- 3 Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, China
- 4 Department of Physics, College of Sciences, National University of Defense Technology, Changsha, China
- 5 School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha, Hunan Province, China
Low-dimensional nanomaterials have garnered significant interest for their unique electronic and optical properties, which are essential for advancing next-generation optoelectronic devices. Among these, tellurium suboxide (TeOx)-based nanowires (NWs), with their quasi-one-dimensional (1D) structure, offer distinct advantages in terms of charge transport and light absorption. In this study, we present a comprehensive investigation into the controlled synthesis, structural properties, and optoelectronic performance of TeOx nanowires. Nanowires were synthesized via chemical vapor deposition process and exhibited a high aspect ratio with excellent structural quality, confirmed through Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The TeOx nanowires demonstrated high crystallinity, smooth surface morphology, and consistent growth across the substrate, making them suitable for scalable device fabrication. The optoelectronic characterization of a fabricated photodetector, based on a single TeOx nanowire, revealed remarkable photoresponsivity and stability across a broad range of light intensities. These findings position TeOx nanowires as promising candidates for future optoelectronic devices such as photodetectors and optical sensors.
Keywords: Chemical Vapor Deposition, Tellurium, Nanowires, optoelectronics, photodetectors
Received: 17 Sep 2024; Accepted: 28 Oct 2024.
Copyright: © 2024 Sui, Lan, Zhang, Zhong, Wang and Cao. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence:
Xiang Lan, School of Materials Science and Engineering, Hunan University, Changsha, China
Mianzeng Zhong, Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, China
Guang Wang, Department of Physics, College of Sciences, National University of Defense Technology, Changsha, China
Jinhui Cao, School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha, Hunan Province, China
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