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REVIEW article

Front. Mater.
Sec. Quantum Materials
Volume 11 - 2024 | doi: 10.3389/fmats.2024.1444769
This article is part of the Research Topic Symmetry-Guided Rational Design and Control of Quantum Matter with New Functionality View all articles

Word Count: 11303 Number of Figures: 5 Number of Table: 1 Transition Metal Oxides: A New Frontier in Spintronics Driven by Novel Quantum States and Efficient Charge-Spin Interconversion

Provisionally accepted
Yamin Han Yamin Han 1,2Bin Lao Bin Lao 1,2Xuan Zheng Xuan Zheng 1,2Sheng Li Sheng Li 1,2Run-Wei Li Run-Wei Li 1,2,3,4Zhiming Wang Zhiming Wang 1,2,3*
  • 1 CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China, Ningbo, China
  • 2 Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China, Ningbo, China
  • 3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • 4 School of Future Technology, University of Chinese Academy of Sciences, Beijing, China

The final, formatted version of the article will be published soon.

    Transition metal oxides (TMOs) have emerged as promising candidates for spintronic applications due to their unique electronic properties and novel quantum states. The intricate interplay between strong spin-orbit coupling and electronic correlations in TMOs gives rise to distinct spin and orbital textures, leading to enhanced spin-momentum locking and efficient charge-spin interconversion. Remarkably, recent researches have unveiled the significant and highly tunable nature of charge-spin interconversion efficiency in TMOs, which can be manipulated through strategies such as electric field gating, epitaxial strain, and heterostructure engineering. This review provides a comprehensive overview of the recent advances in understanding the electronic band structures of TMOs and their correlation with charge-spin interconversion mechanisms. We summarize the tunability of these properties through various experimental approaches and discuss the potential implications for spintronic device applications. The insights gained from this review can guide future research efforts towards the development of high-performance, energy-efficient spintronic devices based on TMOs.

    Keywords: transition metal oxides, electronic structure, charge-spin interconversion, heterostructure engineering, Spintronic devices

    Received: 06 Jun 2024; Accepted: 13 Aug 2024.

    Copyright: © 2024 Han, Lao, Zheng, Li, Li and Wang. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence: Zhiming Wang, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China, Ningbo, China

    Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.