The final, formatted version of the article will be published soon.
ORIGINAL RESEARCH article
Front. Mater.
Sec. Semiconducting Materials and Devices
Volume 11 - 2024 |
doi: 10.3389/fmats.2024.1406853
This article is part of the Research Topic Advanced Nanomaterials and Devices for Brain-Inspired and Quantum Computing View all 5 articles
Ferroelastic twin walls for neuromorphic device applications
Provisionally accepted
Ekhard Salje
1*
Guangming Lu
2*- 1 University of Cambridge, Cambridge, United Kingdom
- 2 Yantai University, Yantai, Shandong Province, China
The possibility to use ferroelastic materials as components of neuromorphic devices is discussed. They can be used as local memristors with the advantage that ionic transport is constraint to twin boundaries where ionic diffusion is much faster than in the bulk and does not leak into adjacent domains. It is shown that nano-scale ferroelastic memristors can contain a multitude of domain walls. These domain walls interact by strain fields where the interactions near surfaces are fundamentally different from bulk materials. We show that surface relaxations (~image forces) are curtailed to short range dipolar interactions which decay as 1/d2 where d is the distance between domain walls. In bigger samples such interactions are long ranging with 1/d. The cross-over regime is typically in the range of some 200-1500nm using a simple spring interaction model.
Keywords: Ferroelastic materials, Twin walls, memristors, wall-wall interactions, Surface relaxations, Domain walls
Received: 25 Mar 2024; Accepted: 01 Aug 2024.
Copyright: © 2024 Salje and Lu. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence:
Ekhard Salje, University of Cambridge, Cambridge, United Kingdom
Guangming Lu, Yantai University, Yantai, 264005, Shandong Province, China
Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.