AUTHOR=Ai Likun , Tian Fangkun , Xu Anhuai , Huang Hua , Qi Ming 

TITLE=Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT

JOURNAL=Frontiers in Materials

VOLUME=9

YEAR=2022

URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2022.980077

DOI=10.3389/fmats.2022.980077

ISSN=2296-8016

ABSTRACT=<p>In this paper, The In<sub>x</sub>Al<sub>1-x</sub>As graded buffer was inserted between the InAlAs buffer layer and the pseudomorphic In<sub>0.66</sub>Ga<sub>0.34</sub>As channel layer to improve material quality in channel. The results show that the In<sub>x</sub>Al<sub>1-x</sub>As graded buffer layer with 50 nm thickness can obtain a good heterojunction interface and the root mean square (RMS) of 0.154 nm. The two dimensional electron gas (2-deg) mobility and concentration were 8570 cm<sup>2</sup>/Vs. and 2.7 cm<sup>−2</sup> × 10<sup>12</sup> cm<sup>−2</sup> at 300K, respectively. In<sub>x</sub>Al<sub>1-x</sub>As graded buffer layer can enhance the interface quality and the electrical performance through releasing the interface strain caused by pseudomorphic In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.66</sub>Ga<sub>0.34</sub>As HEMT. This study shows great potentials by incorporating In<sub>x</sub>Al<sub>1-x</sub>As graded buffer layer in pseudomorphic InP HEMT materials to improve the properties of devices.</p>