AUTHOR=Lu Guangbao , Liu Jun , Zheng Qirong , Li Yonggang 

TITLE=Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices

JOURNAL=Frontiers in Materials

VOLUME=9

YEAR=2022

URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2022.1010049

DOI=10.3389/fmats.2022.1010049

ISSN=2296-8016

ABSTRACT=<p>The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy γ-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of <inline-formula id="inf1"><mml:math id="m1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mrow><mml:mi mathvariant="normal">o</mml:mi><mml:mi>γ</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>H</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math></inline-formula>) in the oxide layer seriously exacerbates the TID effect. Therefore, we developed a dynamic model of mobile particles and fixed defects by solving the rate equations and Poisson’s equation simultaneously, to reveal the contribution and influence mechanisms of <inline-formula id="inf2"><mml:math id="m2" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mrow><mml:mi mathvariant="normal">o</mml:mi><mml:mi>γ</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>H</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math></inline-formula> on the TID effect of MOS devices. We found that <inline-formula id="inf3"><mml:math id="m3" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mrow><mml:mi>o</mml:mi><mml:mi>γ</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>H</mml:mi><mml:mn mathvariant="italic">2</mml:mn></mml:msub></mml:mrow></mml:math></inline-formula> can directly and indirectly promote the formation of <inline-formula id="inf4"><mml:math id="m4" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msubsup><mml:mi>V</mml:mi><mml:mrow><mml:mi>o</mml:mi><mml:mi>γ</mml:mi></mml:mrow><mml:mo>+</mml:mo></mml:msubsup></mml:mrow></mml:math></inline-formula> and <inline-formula id="inf5"><mml:math id="m5" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mrow><mml:mi>o</mml:mi><mml:mi>γ</mml:mi></mml:mrow></mml:msub><mml:msup><mml:mi>H</mml:mi><mml:mo>+</mml:mo></mml:msup></mml:mrow></mml:math></inline-formula>, respectively, which can increase the electric field near the Si/SiO<sub>2</sub> interface and reduce the threshold voltage of silicon MOS devices accordingly. Controlling <inline-formula id="inf6"><mml:math id="m6" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mrow><mml:mi>o</mml:mi><mml:mi>γ</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>H</mml:mi><mml:mn mathvariant="italic">2</mml:mn></mml:msub></mml:mrow></mml:math></inline-formula> with a concentration below 10<sup>14</sup> cm<sup>−3</sup> can suppress the adverse TID effects. The results are much helpful for analyzing the microscopic mechanisms of the TID effect and designing new MOS devices with high radiation-hardening.</p>