AUTHOR=Dai Yajie , Zhao Shouxin , Han Hui , Yan Yafei , Liu Wenhui , Zhu Hua , Li Liang , Tang Xi , Li Yang , Li Hui , Zhang Changjin 

TITLE=Controlled Growth of Indium Selenides by High-Pressure and High-Temperature Method

JOURNAL=Frontiers in Materials

VOLUME=8

YEAR=2022

URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2021.816821

DOI=10.3389/fmats.2021.816821

ISSN=2296-8016

ABSTRACT=<p>The controlled growth of indium selenides has attracted considerable research interests in condensed matter physics and materials science yet remains a challenge due to the complexity of the indium–selenium phase diagram. Here, we demonstrate the successful growth of indium selenides in a controllable manner using the high-pressure and high-temperature growth technique. The γ-InSe and α-In<sub>2</sub>Se<sub>3</sub> crystals with completely different stoichiometries and stacking manner of atomic layers have been controlled grown by subtle tuning growth temperature, duration time, and growth pressure. The as-grown γ-InSe crystal features a semiconducting property with a prominent photoluminescence peak of ∼1.23 eV, while the α-In<sub>2</sub>Se<sub>3</sub> crystal is ferroelectric. Our findings could lead to a surge of interest in the development of the controlled growth of high-quality van der Waal crystals using the high-pressure and high-temperature growth technique and will open perspectives for further investigation of fascinating properties and potential practical application of van der Waal crystals.</p>