AUTHOR=Meng Dongdong D. , Ji Xueqiang Q. , Wang Dafang F. , Chen Zhengwei W. 

TITLE=Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

JOURNAL=Frontiers in Materials

VOLUME=8

YEAR=2021

URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2021.672128

DOI=10.3389/fmats.2021.672128

ISSN=2296-8016

ABSTRACT=<p>Monoclinic Ga<sub>2</sub>O<sub>3</sub> (<italic>β</italic>-Ga<sub>2</sub>O<sub>3</sub>) films were grown on Si/SiO<sub>2</sub> by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by V<sub>GS</sub>. The current generated under dark conditions could also be regulated by V<sub>GS</sub> and tended to constant when the regulation of V<sub>GS</sub> was reaching saturation. Meanwhile, V<sub>GS</sub> was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.</p>