AUTHOR=Novkovski Nenad 

TITLE=Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

JOURNAL=Frontiers in Materials

VOLUME=1

YEAR=2014

URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2014.00030

DOI=10.3389/fmats.2014.00030

ISSN=2296-8016

ABSTRACT=<p>Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high-permittivity dielectrics (high-<italic>k</italic>) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-<italic>k</italic> are discussed in this paper and directions for further development are indicated. Further progress also requires better understanding of the physical phenomena appearing in stacked high-<italic>k</italic>/interfacial layer dielectrics.</p>