The final, formatted version of the article will be published soon.
ORIGINAL RESEARCH article
Front. Earth Sci.
Sec. Solid Earth Geophysics
Volume 13 - 2025 |
doi: 10.3389/feart.2025.1504605
The Activation and Slip of Laboratory Faults Containing Gypsum Gouge under Triaxial Stress Conditions
Provisionally accepted- 1 Chongqing University, Chongqing, China
- 2 CETC Academy of Chips Technology, Chongqing, China
- 3 Jiujiang University, Jiujiang, Jiangxi Province, China
Understanding the activation and slip characteristics of faults is essential for the safety and stability of underground engineering. The mechanical behavior of laboratory faults with gouge of specific strength remains unclear. Therefore, triaxial compression tests were performed on saw-cut sandstone specimens containing artificial gypsum gouge. Strength criteria analysis, crack pattern analysis, and fault surface roughness evaluation were conducted to investigate the effects of dip angle, confining pressure, and loading rate on the failure modes and stick-slip characteristics of the faults. The results indicate that as the fault dip increases, the fracture mode transitions from rock damage to shear failure along the saw-cut surface.Fractures within the gypsum fault gouge result in deviations between the measured and theoretical strength values. The magnitude of the normal stress controls the fault surface roughness and the variations in the stress drop during fault activation. An increase in the loading rate results in a transition from stick-slip behavior to stable slip. This study enhances the understanding of fault stability and provides valuable insights into monitoring strategies for underground engineering and earthquake prediction.
Keywords: fault strength, Fault activation, STICK-SLIP, Fault gouge, Triaxial loading
Received: 01 Oct 2024; Accepted: 27 Jan 2025.
Copyright: © 2025 Liu, Si, Yang and Xu. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence:
Hu Si, Chongqing University, Chongqing, China
Zili Yang, CETC Academy of Chips Technology, Chongqing, China
Dayang Xu, Jiujiang University, Jiujiang, Jiangxi Province, China
Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.