AUTHOR=Madoune Yassine , Yang DingBang , Ahmed Yameen , Al-Makeen Mansour M. , Huang Han 

TITLE=PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations

JOURNAL=Frontiers in Chemistry

VOLUME=11

YEAR=2023

URL=https://www.frontiersin.org/journals/chemistry/articles/10.3389/fchem.2023.1132567

DOI=10.3389/fchem.2023.1132567

ISSN=2296-2646

ABSTRACT=<p>Atomically thin layered transition metal dichalcogenides (TMDs), such as MoS<sub>2</sub> and WS<sub>2</sub>, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resulting from the broken inversion symmetry, as well as the potential new utilization in functional optoelectronic, electromagnetic and nanoelectronics devices. To realize their potential device applications, it is desirable to achieve controlled growth of these layered nanomaterials with a tunable stacking. Here, we demonstrate the Physical Vapor Deposition (PVD) growth of spiral pyramid-shaped WS<sub>2</sub> with ∼200 <inline-formula id="inf1"><mml:math id="m1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>μ</mml:mi><mml:mi>m</mml:mi></mml:mrow></mml:math></inline-formula> in size and the interesting optical properties <italic>via</italic> AFM and Raman spectroscopy. By controlling the precursors concentration and changing the initial nucleation rates in PVD growth, WS<sub>2</sub> in different nanoarchitectures can be obtained. We discuss the growth mechanism for these spiral-patterned WS<sub>2</sub> nanostructures based on the screw dislocations. This study provides a simple, scalable approach of screw dislocation-driven (SDD) growth of distinct TMD nanostructures with varying morphologies, and stacking.</p>