AUTHOR=Sang Dandan , Liu Jiaoli , Wang Xiaofeng , Zhang Dong , Ke Feng , Hu Haiquan , Wang Wenjun , Zhang Bingyuan , Li Hongdong , Liu Bo , Wang Qinglin TITLE=Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures JOURNAL=Frontiers in Chemistry VOLUME=8 YEAR=2020 URL=https://www.frontiersin.org/journals/chemistry/articles/10.3389/fchem.2020.00531 DOI=10.3389/fchem.2020.00531 ISSN=2296-2646 ABSTRACT=

In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors. The fabricated heterojunction demonstrated NDR phenomena at 20 and 80°C. However, these effects disappeared followed by the occurrence of rectification characteristics at 120°C. At higher temperatures, the forward current was increased, and the turn-on voltage and peak-to-valley current ratio (PVCR) were reduced. In addition, the underlying mechanisms of carrier tunneling conduction at different temperature and bias voltages were analyzed through schematic energy band diagrams and semiconductor theoretical models. High-temperature NDR properties of the n-ZnO NRs/p-degenerated diamond heterojunction can extend the applications of resistive switching and resonant tunneling diodes, especially in high-temperature, and high-power environments.