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ORIGINAL RESEARCH article

Adv. Opt. Technol.
Sec. Optical Manufacturing and Design
Volume 14 - 2025 | doi: 10.3389/aot.2025.1474728
This article is part of the Research Topic Optoelectronics, Ultrafast Optics, and Terahertz Radiations for Advanced Device Applications View all 4 articles

MGL/SiNW based Exotic pin switch with low Insertion Loss & High Isolation for THz communication: A Quantum Rectified Schrodinger-Poisson Drift Diffusion model for Design & Analysis of the Switching Behaviour

Provisionally accepted
SAUNAK BHATTACHARYA SAUNAK BHATTACHARYA 1ABHIJIT KUNDU ABHIJIT KUNDU 1*JHUMA KUNDU JHUMA KUNDU 2Angsuman Sarkar Angsuman Sarkar 3MOUMITA MUKHERJEE MOUMITA MUKHERJEE 4
  • 1 Chaibasa Engineering College, Chaibasa, Jharkhand, India
  • 2 NSHM Knowledge Campus, Kolkata, West Bengal, India
  • 3 Kalyani Government Engineering College (KGEC ), Kalyani, West Bengal, India
  • 4 Adamas University, Kolkata, West Bengal, India

The final, formatted version of the article will be published soon.

    In this paper, authors have anticipated the aspect of exotic Multi-Graphene Layer/Si nanowire (MGL/SiNW) pin device as a switch in THz frequency domain. The device has been developed by the incorporation of multiple SiNW into the intrinsic region of the device. In contrast, cap and bottom layers have been developed by the incorporation of Multiple Graphene layers. The electrical characterization of the proposed exotic pin device is carried out by developing a Quantum Rectified Schrodinger-Poisson-Drift Diffusion (QRSP-DD) model. The developed QRSP-DD model is validated by analyzing the experimental and simulation observations under the consideration of alike operating conditions. After establishing the validity, the same model in conjunction PSpice simulator is used to obtain the switching characteristics of MGL/SiNW pin based seriesshunt & shunt Single Pole Single Throw (SPST), Single Pole Double Throw (SPDT) & Single Pole Multiple Throw (SPMT) switches in THz frequency domain. The analysis proves that the MGL/SiNW pin based SPMT switch offers low resistance (0.56Ω), high isolation (91.15dB), and low insertion loss (0.007dB) at 5 THz frequency compared to its SiNW counterpart.

    Keywords: MGL/SiNW, QRSP-DD model, RF series resistance, Insertion loss, Isolation

    Received: 02 Aug 2024; Accepted: 15 Jan 2025.

    Copyright: © 2025 BHATTACHARYA, KUNDU, KUNDU, Sarkar and MUKHERJEE. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

    * Correspondence: ABHIJIT KUNDU, Chaibasa Engineering College, Chaibasa, Jharkhand, India

    Disclaimer: All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.