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ORIGINAL RESEARCH article
Front. Energy Res.
Sec. Nano Energy
Volume 12 - 2024 |
doi: 10.3389/fenrg.2024.1413495
LACVD growth of diamond on gallium nitride substrates with PH3 in recipe
Provisionally accepted- 1 Nanyang Technological University, Singapore, Singapore
- 2 University of Hasselt, Hasselt, Limburg, Belgium
- 3 Institute of Minerals and Materials Technology (CSIR), Bhubaneswar, Orissa, India
- 4 University of Cádiz, Cádiz, Spain
Keywords: Diamond, GaN, Chemical Vapor Deposition, phosphine, Hydrogen, etching Font: (Default) Times New Roman, 12 pt Font: (Default) Times New Roman, 12 pt
Received: 07 Apr 2024; Accepted: 31 Oct 2024.
Copyright: © 2024 Mallik, K. J., Desta, Pobedinskas, Joy, Rouzbahani, Lloret, Boyen and Haenen. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence:
Awadesh Kumar Mallik, Nanyang Technological University, Singapore, Singapore
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